Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a prerequisite for stabilizing DPs on selective atomically flat cleavage planes. Tuning of the DP in these materials has been suggested via modifications to the atomic structure of the entire system. Using the example of As2Te3 and ZnTe5, which are not TIs, we show that a quantum phase transition can be induced in atomically flat and stepped surfaces, for As2Te3 and ZrTe5, respectively. This is achieved by establishing a framework for controlling electronic properties that is focused on local perturbations at key locations that we call sub-structural elements (SSEs). We exemplify this framework through a novel method of isovalent sublayer anion doping and biaxial strain.
@article{arxiv.2304.05549,
title = {Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements},
author = {Thomas K. Reid and S. Pamir Alpay and Alexander V. Balatsky and Sanjeev K. Nayak},
journal= {arXiv preprint arXiv:2304.05549},
year = {2024}
}