相关论文: Neutral Silicon Vacancy Centers in Diamond via Pho…
Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in…
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV…
The nitrogen-vacancy center (NV) in diamond, with its exceptional spin coherence and convenience in optical spin initialization and readout, is increasingly used both as a quantum sensor and as a building block for quantum networks.…
The split silicon-vacancy defect (SiV) in diamond is an electrically and optically active color center. Recently, it has been shown that this color center is bright and can be detected at the single defect level. In addition, the SiV defect…
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly…
The neutral silicon--vacancy (SiV$^{0}$) center in diamond combines inversion symmetry with optical emission, making it a robust quantum emitter resilient to stray electric fields. Using first-principles density-functional theory, we…
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal…
Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics…
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded…
The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond…
Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale…
The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…
The negatively charged nickel vacancy center (NiV$^-$) in diamond is a promising spin qubit candidate with predicted inversion symmetry, large ground state spin orbit splitting to limit phonon-induced decoherence, and emission in the…
Ultra-small, low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to…
The coherent control of the orbital state is crucial for color centers in diamonds for realizing extremely low-power manipulation. Here, we propose the neutrally charged nitrogen-vacancy center, NV$^0$, as an ideal system for orbital…
The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum…
Silicon-vacancy (SiV) color centers in diamond have great potential for optical sensing and bio-imaging applications. However, the fabrication of large-scale high-density SiV centers in diamond remains difficult. Here, we report a promising…
The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the…
The negatively charged nitrogen-vacancy defect (NV)$^-$ in diamond has attracted much attention in recent years in qubit and biological applications. The negative charge is donated from nearby nitrogen donors that could limit or stem the…
We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to the mode of a fully-tunable, fiber-based, optical resonator. We demonstrate that…