相关论文: A Compensated Design of the LGAD Gain Layer

Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode…

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined…

The Adaptive Gain Integrating Pixel Detector (AGIPD) is an x-ray imager, custom designed for the European x-ray Free-Electron Laser (XFEL). It is a fast, low noise integrating detector, with an adaptive gain amplifier per pixel. This has an…

In the past 10 years, two design innovations, the introduction of low internal gain (LGAD) and of resistive read-out (RSD), have radically changed the performance of silicon detectors. The LGAD mechanism, increasing the signal-to-noise…

An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower…

A polarization-independent reconfigurable frequency selective rasorber (FSR)/absorber with low insertion loss based on diodes is proposed in this paper. The presented structure consists of a lossy layer based on square loops and a bandpass…

A closed-form approximate expression is presented for the short time-frame development of silicon diode sensor signals in the context of high frame-rate detection of incident X-ray fluxes, in the limit that the X-ray absorption profile…

With the High-Luminosity Large Hadron Collider (HL-LHC) the number of collisions per bunch crossing increases. To cope with these high rates in the pixel trackers, per-pixel time measurements are required, which implies the need for fast…

We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been…

GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…

To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche…

Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where…

A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology utilizes the maximum of the time derivative of the edge…

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with…

AC-coupled Low Gain Avalanche Detector (AC-LGAD) is a new precise detector technology developed in recent years. Based on the standard Low Gain Avalanche Detector (LGAD) technology, AC-LGAD sensors can provide excellent timing performance…

The next-generation ALICE 3 experiment at the High-Luminosity LHC (HL-LHC) requires detector technologies that combine fine spatial resolution, fast timing, and an extremely low material budget. This paper presents the design,…

The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well…

Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2,…

We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier…

Micro-Pattern Gas Detectors (MPGDs) represent a category of gaseous ionization detectors that utilize microelectronics. They feature a remarkably small distance between the high potential difference anode and cathode electrodes and are…