相关论文: Novel STT/SHE MTJ Compact Model Compatible with NG…
Energy-efficiency and design-complexity of high-speed on-chip and inter-chip data-interconnects has emerged as the major bottleneck for high-performance computing-systems. As a solution, we propose an ultra-low energy interconnect…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
Superconducting Tunnel Junctions (STJs) are used as high-resolution quantum sensors to search for evidence of sterile neutrinos in the electron capture decay of $^7$Be. We are developing spatially-resolved Monte-Carlo simulations of the…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…
Due to the massive parallel computing capability and outstanding image and signal processing performance, cellular neural network (CNN) is one promising type of non-Boolean computing system that can outperform the traditional digital logic…
Dynamics of a ferromagnetic macrospin (e.g., a free layer of a magnetic tunnel junction (MTJ)) can be described in terms of equivalent capacitor charge $Q$ and inductor flux $\Phi$, in a manner similar to a standard electric LC circuit, but…
We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device,…
In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed comparison between the SHE-MTJ-based C-LUT and Spin Transfer…
In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…
Owing to high device density, scalability and non-volatility, Magnetic Tunnel Junction-based crossbars have garnered significant interest for implementing the weights of an artificial neural network. The existence of only two stable states…
There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with…
Brain-inspired learning in physical hardware has enormous potential to learn fast at minimal energy expenditure. One of the characteristics of biological learning systems is their ability to learn in the presence of various noise sources.…
Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to…
We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…
This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access memories (STT-MRAMs) operating at the liquid nitrogen…
Monte Carlo (MC) simulations are powerful computational tools for investigating thermodynamic behavior and validating analytical approaches in complex physical systems. Here we present ETHER (Efficient Tool for THermodynamics Exploration…
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…
Ongoing semiconductor scaling challenges and the rise of neuromorphic computing have sparked interest in exploring novel computing schemes to achieve higher power efficiency and computational capabilities. Probabilistic computing is one…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…