相关论文: Novel STT/SHE MTJ Compact Model Compatible with NG…
The quest for highly efficient cognitive computing has led to extensive research interest for the field of neuromorphic computing. Neuromorphic computing aims to mimic the behavior of biological neurons and synapses using solid-state…
Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier…
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are…
The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various…
Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS)…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
Spin-torque nano-oscillators (STNOs) are promising nanoscale microwave sources for spintronic applications, serving as signal generators or elements in neuromorphic computing systems. In this paper, we investigate the experimental…
Present information and communication technologies are largely based on electronic devices, which suffer from heat generation and high power consumption. Alternatives like spintronics and magnonics, which harness the spin degree of freedom,…
Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial…
Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
Recently there has been increasing activity to build dedicated Ising Machines to accelerate the solution of combinatorial optimization problems by expressing these problems as a ground-state search of the Ising model. A common theme of such…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
Today's high-performance architectures are increasingly constrained by data movement latency and energy overhead, as the slowdown of single-core performance scaling coincides with the rise of highly data-intensive workloads. In-memory…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a…
The desire to empower resource-limited edge devices with computer vision (CV) must overcome the high energy consumption of collecting and processing vast sensory data. To address the challenge, this work proposes an energy-efficient…