相关论文: Spin-Hall magnetoresistance in quasi-two-dimension…
We present a numerical macrospin model for harmonic voltage detection in multilayer spintronic devices. The core of the computational backend is based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines high performance with…
(BEDT-TTF)$_2$MHg(SCN)$_4$[M:K,Rb,Tl] shows typical two-dimensional angular dependent magnetoresistance oscillation (ADMRO) at high temperature (T$>$8K), but at lower temperature it shows anomalously large magnetoresistance, and the ADMRO…
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model…
Disentangling the relationship between the insulating state with a charge gap and the magnetic order in an antiferromagnetic (AF) Mott insulator remains difficult due to inherent phase separation as the Mott state is perturbed. Measuring…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit…
We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…
In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a reduction of ~2.5% for the bilayer specimen as compared to…
A magnetic skyrmion is a topological magnetization structure with a nanometric size and a well-defined swirling spin distribution, which is anticipated to be an essential building block for novel skyrmion-based device applications. We study…
We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of…
Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by…
In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can…
Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp…
We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a…
Ferromagnetic resonance (FMR) in magnetic multilayers of type F1/f/F2, where two strongly ferromagnetic layers F1 and F2 are separated by a weakly magnetic spacer f with a compositional gradient along its thickness, is investigated. The…
Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side.…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…