相关论文: Vertical GaN Diode BV Maximization through Rapid T…

GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…

The semiconductors industry benefits greatly from the integration of Machine Learning (ML)-based techniques in Technology Computer-Aided Design (TCAD) methods. The performance of ML models however relies heavily on the quality and quantity…

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…

Physics simulations like computational fluid dynamics (CFD) are a computational bottleneck in computer-aided design (CAD) optimization processes. To overcome this bottleneck, one requires either an optimization framework that is highly…

Spins in gated semiconductor quantum dots (QDs) are a promising platform for Hubbard model simulation inaccessible to computation. Precise control of the tunnel couplings by tuning voltages on metallic gates is vital for a successful…

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…

We propose a variational Bayesian (VB) procedure for high-dimensional linear model inferences with heavy tail shrinkage priors, such as student-t prior. Theoretically, we establish the consistency of the proposed VB method and prove that…

A simple and effective method for the junction termination design was suggested. Optimization method uses lateral charge function F(x) which depends from two arguments and can be changed in wide range of shapes. To demonstrate method…

This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low…

This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The heterojunction…

Accurate prediction of battery temperature rise is very essential for designing an efficient thermal management scheme. In this paper, machine learning (ML) based prediction of Vanadium Redox Flow Battery (VRFB) thermal behavior during…

Accurate spatiotemporal forecasting is critical for numerous complex systems but remains challenging due to complex volatility patterns and spectral entanglement in conventional graph neural networks (GNNs). While decomposition-integrated…

This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…

Voltage overscaling, or undervolting, is an enticing approximate technique in the context of energy-efficient Deep Neural Network (DNN) acceleration, given the quadratic relationship between power and voltage. Nevertheless, its very high…

The increasing integration of intermittent distributed energy resources (DERs) has introduced significant variability in distribution networks, posing challenges to voltage regulation and reactive power management. This paper presents a…

We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…

Uncertainties such as manufacturing tolerances cause performance variations in complex engineering systems, making robust design optimization (RDO) essential. However, simulation-based RDO faces high computational cost for statistical…

Estimating free energy is a fundamental problem in statistical mechanics. Recently, machine-learning-based methods, particularly the variational autoregressive networks (VANs) have been proposed to minimize variational free energy and to…

Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are…

The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have…