相关论文: Phonon-assisted Auger-Meitner Recombination in Sil…
Artificial reverberation (AR) models play a central role in various audio applications. Therefore, estimating the AR model parameters (ARPs) of a reference reverberation is a crucial task. Although a few recent deep-learning-based…
Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing…
In this work, we report a new stop-band formation mechanism by performing the atomistic Green's function calculation and the wave-packet molecular dynamics simulation for a system with germanium-nanoparticle array embedded in a crystalline…
Coherent phonons, light-induced coherent lattice vibrations in solids, provide a powerful route to engineer structural and electronic degrees of freedom using light. In this manuscript, we formulate an ab initio theory of the displacive…
Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas…
We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed…
The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of…
This paper develops a theoretical framework for the design of Active Split-Ring Resonators (ASRRs). An ASRR is a Split-Ring Resonator (SRR) equipped with a tunable negative resistor, enabling both switchability and quality factor boosting…
Phonon assisted photoluminescence provides a direct window into exciton phonon interactions in low dimensional semiconductors. Using fully ab initio many body perturbation theory, including finite momentum Bethe Salpeter calculations, we…
Silicon photonics lacks a second-order nonlinear optical response in general because the typical constituent materials are centro-symmetric and lack inversion symmetry, which prohibits second-order nonlinear processes such as second…
We report the first demonstration of a phonon-mediated silicon detector technology that provides a primary phonon measurement in a low-voltage region, and a simultaneous indirect measurement of the ionization signal through…
Four-wave mixing can be stimulated or occur spontaneously. The first process is intrinsically much stronger, and well understood through classical nonlinear optics. The latter, also known as parametric fluorescence, can be explained only in…
A modified phonon confinement model considering the size distribution, an improved phonon dispersion curve and a confinement function is developed for the calculation of size dependent Raman spectra of the silicon (Si) nanocrystals. The…
The renormalization of electronic eigenenergies due to electron-phonon coupling is sizable in many materials with light atoms. This effect, often neglected in ab-initio calculations, can be computed using the perturbation-based…
Numerical evolution of the spherically symmetric, massive Klein-Gordon field is presented using a new adaptive mesh refinement (AMR) code with fourth order discretization in space and time, along with compactification in space. The system…
We investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show, that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction…
A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and…
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…