相关论文: Memristive and tunneling effects in 3D interconnec…
We report an unconventional resistive switching effect on high-density self-assembled Ag-nanowire networks tailored by a fuse-like operation. We propose a mechanism to rationalize the observed phenomenology by analyzing the electrical…
Self-assembled networks of metallic nanowires (NWs) are being intensively explored as test benches for neuromorphic proposals. In this work, we study the electric transport properties of dense self-assembled networks of Ag-based NWs…
Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire…
We present a transparent conducting electrode composed of a periodic two-dimensional network of silver nanowires. Networks of Ag nanowires are made with wire diameters of 45-110 nm and pitch of 500, 700 and 1000 nm. Anomalous optical…
Random networks offer fertile ground for achieving complexity and criticality, both crucial for an unconventional computing paradigm inspired by biological brains' features. In this work, we focus on characterizing and modeling different…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in…
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with…
We demonstrate that it is possible to distinguish two conductance switching mechanisms in silver sulfide devices at room temperature. Experiments were performed using a Ag$_2$S thin film deposited on a wide Ag bottom electrode, which was…
Free-standing, interconnected metallic nanowire networks with density as low as 40 mg/cm^{3} have been achieved over cm-scale areas, using electrodeposition into polycarbonate membranes that have been ion-tracked at multiple angles.…
As silver nanowire (AgNW) networks reach increasing technological maturity, research efforts are progressively shifting toward their integration into functional devices. In this context, it is essential to assess how thin film coating…
Fabrication of silver nanowires (AgNWs) with fine and independent control of both the diameter (from 30 to 120 nm) and length (from 5 to 120 $\mu$m) by concomitant addition of co-nucleants and temperature control is demonstrated, and used…
Photo-bolometric effect is critically important in optoelectronic structures and devices employing metallic electrodes with nanoscale features due to heating caused by the plasmonic field enhancement. One peculiar case is individual silver…
Nanowire networks (NWNs) represent a unique hardware platform for neuromorphic information processing. In addition to exhibiting synapse-like resistive switching memory at their cross-point junctions, their self-assembly confers a neural…
Bottom-up fabrication of inorganic nanostructures is emerging as an alternative to classical top-down approaches, offering precise nanometer-scale control at relatively low cost and effort. In particular, DNA nanostructures provide…
The synthesis of silver nanowires in solution phase is of great interest because of their applicability for fabrication of plasmonic devices. Silver nanowires with diameters of 6.5 nm and length exceeding microns are synthesized in aqueous…
We have studied the effect of thermal effects on the structural and transport response of Ag atomic-size nanowires generated by mechanical elongation. Our study involves both time-resolved atomic resolution transmission electron microscopy…
Recent research on silver nanowires prepared on DNA templates has focused on two fundamental applications: nano-scale circuits and sensors. Despite its broad potential, the formation kinetics of DNA-templated silver nanowires remains…
The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory,…
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging…