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相关论文: Layered topological semimetal GaGeTe: new polytype…

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GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $\alpha$-GaGeTe ($R\bar{3}m$) and $\beta$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of…

We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is…

State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet,…

Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S…

The layered WHM - type (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=S/Se/Te) materials represent a large family of topological semimetals, which provides an excellent platform to study the evolution of topological semimetal state with the fine tuning of…

材料科学 · 物理学 2018-04-04 Jin Hu , Yanglin Zhu , David Graf , Zhijie Tang , Zhiqiang Mao

The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more…

Weyl semimetals have a variety of intriguing physical properties, including topologically protected electronic states that coexist with conducting states. Possible exploitation of topologically protected states in a conducting material is…

In this work we predict a family of noncentrosymmetric two-dimensional (2D) Weyl semimetals composed by porous Ge and SiGe structures. These systems are energetically stable graphenylene-like structures with a buckling, spontaneously…

材料科学 · 物理学 2024-02-06 Emmanuel V. C. Lopes , Rogerio J. Baierle , Roberto H. Miwa , Tome M. Schmidt

Group-IV monochalcogenides have attracted much attention due to their potential of ferroelectric and multiferroic properties. Recently, centrosymmetric gamma-phase GeSe in a double-layer honeycomb lattice has been theoretically predicted,…

材料科学 · 物理学 2021-09-08 Han-gyu Kim , Hyoung Joon Choi

Plastic inorganic semiconductors are promising candidates for high performance stable flexible electronics. Germanium based chalcogenide materials are well known for excellent semiconducting properties, specifically superior carrier…

材料科学 · 物理学 2026-02-23 Qiao Wang , Ping-An Hu

The structural, electronic and dynamical properties of a group of 2D germanium-based compounds, including GeC, GeN, GeO, GeSi, GeS, GeSe, and germanene, are investigated by employing first-principles calculations. The most stable structure…

Layered three-dimensional (3D) topological semimetals have attracted intensively attention due to the exotic phenomena and abundantly tunable properties. Here we report the experimental evidence for the 3D topological semimetal phase in…

The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first…

The spin-ladder compounds of the BaFe2X3 (X = chalcogen) family may be viewed as dimensional reductions (along stripe-like motifs) of the two-dimensional iron-based pnictide planes extensively studied since 2006. Remarkably, despite their…

Germanium selenide (GeSe) is a unique two-dimensional (2D) material showing various polymorphs stable at ambient condition. Recently, a new phase with a layered hexagonal lattice ({\gamma}-GeSe) was synthesized with ambient stability and…

材料科学 · 物理学 2022-10-19 Bowen Wang , Xuefei Yan , Xiangyue Cui , Yongqing Cai

Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase even higher than graphite while its monolayer is a…

材料科学 · 物理学 2022-10-19 Changmeng Huan , Pu Wang , Bingtao Liu , Binghan He , Yongqing Cai , Qingqing Ke

The experimental discovery of the topological Dirac semimetal establishes a platform to search for various exotic quantum phases in real materials. ZrSiS-type materials have recently emerged as topological nodal-line semimetals where gapped…

Topological semimetals generally contain heavy elements. Using density-functional theoretic calculations, we predict that three dense lithium polymorphs in the pressure range 200--360 GPa display nontrivial semimetallic electronic…

材料科学 · 物理学 2019-05-01 S. F. Elatresh , Zhimou Zhou , N. W. Ashcroft , S. A. Bonev , Ji Feng , Roald Hoffmann

Band structure, Fermi surface, and phonon dispersions of noncentrosymmetric B20-type RhGe are calculated ab initio for the first time and their evolution with increasing pressure is investigated. We consider in detail symmetry-conditioned…

$\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) material for which a significative lattice distortion combined with a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface, which…

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