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We are investigating the use of low temperature wafer-wafer bonding in the fabrication of next-generation particle pixel detectors. This bonding technique could enable the integration of fully processed CMOS readout wafers with high-Z…

仪器与探测器 · 物理学 2025-06-17 J. Wüthrich , K. Deplazes , A. Rubbia

In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…

仪器与探测器 · 物理学 2023-05-17 Johannes Wüthrich , Christoph Alt , André Rubbia

Semiconductor pixel detectors are widely established in High Energy Physics (HEP) and Medical physics for their high spatial resolution and tracking capabilities. Research on both monolithic detectors and hybrid detectors is ongoing.…

Hybrid bonding is a pivotal technology for enabling three dimensional integrated circuits. Among the foremost challenges facing 3D IC implementation is thermal management, where a deep understanding of heat conduction across bonded…

介观与纳米尺度物理 · 物理学 2026-01-07 Xingqiang Zhang , Liu Chang , Liyi Li , Zhe Cheng

GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device…

Interface-specific hydrogen- (H-)bonding network of water next to a substrate (including air) directly controls the energy transfer and chemical reaction pathway at many charged aqueous interfaces. Yet, experimental characterization of such…

软凝聚态物质 · 物理学 2023-01-02 Yao Hsiao , Ting-Han Chou , Animesh Patra , Yu-Chieh Wen

In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and…

应用物理 · 物理学 2018-12-04 Aurimas Sakanas , Elizaveta Semenova , Luisa Ottaviano , Jesper Mørk , Kresten Yvind

We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or…

介观与纳米尺度物理 · 物理学 2017-05-10 Carlos A. Polanco , Rouzbeh Rastgarkafshgarkolaei , Jingjie Zhang , Nam Le , Pamela M. Norris , Avik W. Ghosh

This paper analyzes a transient method for the characterization of low-resistance thermal interfaces of microelectronic packages. The transient method can yield additional information about the package not available with traditional static…

综合物理 · 物理学 2008-01-08 B. Smith , T. Brunschwiler , B. Michel

SiC is a promising substrate for Si-on-insulator (SOI) wafers for efficient thermal management owing to its high thermal conductivity and large bandgap. However, fabricating a Si device layer on a SiC substrate with a high and uniform…

材料科学 · 物理学 2024-06-26 Rulei Guo , Bin Xu , Fengwen Mu , Junichiro Shiomi

As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and…

- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications…

仪器与探测器 · 物理学 2016-11-01 M. Deveaux , J. Baudot , A. Dorokhov , D. Doering , J. Heymes , M. Kachel , M. Koziel , B. Linnik , C. Müntz , J. Stroth

We report measurements of the critical temperature of YBCO-Co doped YBCO Superconductor-Normal bilayer films. Depending on the morphology of the S-N interface, the coupling between S and N layers can be turned on to depress the critical…

超导电性 · 物理学 2009-10-31 Emil Polturak , Gad Koren , David Cohen , Ofer Nesher , Roman Mints , Igor Snapiro

High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…

Reducing the fabrication cost of photonic integrated circuits while maintaining low optical losses and technological simplicity is essential for their wider implementation. In conventional manufacturing methods, the dielectric cladding…

A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic…

材料科学 · 物理学 2017-04-26 Eric Tea , Jianqiu Huang , Guanchen Li , Celine Hin

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical…

Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band…

CMOS Image Sensors are experiencing significant growth due to their capabilities to be integrated in smartphones with refined image quality. One of the major contributions to the growth of image sensors is the innovation brought about in…

信号处理 · 电气工程与系统科学 2023-06-09 Kirthika Nahalingam , Linda P. B. Katehi

Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform…

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