相关论文: Ultrafast carbon nanotube photodetectors with band…
Photodetectors play key roles in many applications such as remote sensing, night vision, reconnaissance, medical imaging, thermal imaging, and chemical detection. Several properties such as performance, reliability, ease of integration,…
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received…
Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the…
The development of wearable photodetectors demands a unique combination of broadband optical sensitivity, mechanical flexibility, and skin-compatibility, with these requirements rarely met simultaneously by existing technologies. Here, we…
Photonic signal processing requires efficient on-chip light sources with higher modulation bandwidths. Todays conventional fastest semiconductor diode lasers exhibit modulation speeds only on the order of a few tens of GHz due to gain…
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…
Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH$_3$NH$_3$PbI$_3$ nanowires (MAPbI$_3$NW). These devices represent light responsivities of R=7.7x10$^5$ A/W at low-lighting conditions…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs enabling control of the CNTs photoconductance by…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…
Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental…
We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as…
Optical hyperspectral imaging based on absorption and scattering of photons at the visible and adjacent frequencies denotes one of the most informative and inclusive characterization methods in material research. Unfortunately, restricted…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…
We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has…
Graphene has emerged as a promising material for photonic applications fuelled by its superior electronic and optical properties. However, the photoresponsivity is limited by the low absorption cross section and ultrafast recombination…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…