相关论文: Spin-Acoustic Control of Silicon Vacancies in 4H S…
Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
Spin-phonon interactions have a dual role in emerging spin-based quantum technologies. While they can be a limitation to device performance through decoherence, they also serve as a critical resource for coherent spin control, detection,…
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays…
Spin echo can be used to refocus random dynamical phases caused by inhomogeneities in control fields and thereby retain the purity of a spatial distribution of quantum spins. This technique for accurate spin control is an essential…
Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This…
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has…
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…
Mechanical degrees of freedom very weakly couple to spins in semiconductors. The inefficient coupling between phonons and single electron spins in semiconductor quantum dots (QDs) hinders their integration into on-chip acoustically coupled…
Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV)…
We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of…
Quantum control of solid-state spin qubits typically involves pulses in the microwave domain, drawing from the well-developed toolbox of magnetic resonance spectroscopy. Driving a solid-state spin by optical means offers a high-speed…
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers…
Zone-folded acoustic phonons (6 THz) in 4H silicon carbide (SiC) have been coherently excited using a femtosecond near-infrared pulse and measured through transient reflectivity with a pump and probe protocol. Their amplitude is coherently…
Room temperature optically detected magnetic resonance experiments on spin 3/2 Silicon vacancies in 4H-SiC are reported. The $m_s=+1/2\leftrightarrow -1/2$ transition is accessed using a two microwave frequency excitation protocol. The…
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon…
The ability to control microwave emission from a spin ensemble is a requirement of several quantum memory protocols. Here, we demonstrate such ability by using a resonator whose frequency can be rapidly tuned with a bias current. We store…