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Achieving low contact resistance in advanced quantum electronic devices remains a critical challenge. With the growing demand for faster and energy-efficient devices, 2D contact engineering offers a promising solution. Beyond graphene,…

Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…

应用物理 · 物理学 2019-05-24 David Maeso , Andres Castellanos-Gomez , Nicolas Agraït , Gabino Rubio-Bollinger

The epitaxial growth of two-dimensional (2D) $\beta-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2…

Low-dimensional materials are susceptible to electronic instabilities such as charge density waves (CDWs), originating from a divergence in the Lindhard electron response function, combined with a finite electron-phonon coupling strength.…

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high…

Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type…

应用物理 · 物理学 2019-04-09 Xia Wei , Faguang Yan , Quanshan Lv , Wenkai Zhu , Ce Hu , Amalia Patan`e , Kaiyou Wang

Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic…

材料科学 · 物理学 2017-12-22 Alka Sharma , A. K. Srivastava , T. D. Senguttuvan , Sudhir Husale

A few-micron thick structure that shows nearly 100% resonant polarized absorptance at a predefined midinfrared wavelength is designed and simulated. Like resonant-cavity enhanced photodetector structure, it contains a thin absorber enclosed…

CuTe is a two-dimensional (2D) layered material, yet forming a quasi-one-dimensional (quasi-1D) charge-density-wave (CDW) along the a-axis in the ab-plane at high transition temperature $T_{CDW}=335$ K. However, the anisotropic properties…

强关联电子 · 物理学 2022-03-03 R. S. Li , L. Yue , Q. Wu , S. X. Xu , Q. M. Liu , Z. X. Wang , T. C. Hu , X. Y. Zhuo , L. Y. Shi , S. J. Zhang , D. Wu , T. Dong , N. L. Wang

Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for…

The excellent optoelectronic properties, straightforward synthesis, and robust material stability of quasi-2D metal halide perovskites have made them a hot research topic for optoelectronic devices. In layered organic-inorganic perovskites,…

材料科学 · 物理学 2025-10-31 Brindhu Malani S , Eugen Klein , Rostyslav Lesyuk , Christian Klinke

Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material…

介观与纳米尺度物理 · 物理学 2014-11-07 Xiaomu Wang , Aaron M. Jones , Kyle L. Seyler , Vy Tran , Yichen Jia , Huan Zhao , Han Wang , Li Yang , Xiaodong Xu , Fengnian Xia

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect…

Scaling the photon-detection area of superconducting nanowire single-photon detectors (SNSPDs) has traditionally been achieved by nanowire meandering. However, material inhomogeneities and fabrication-induced defects, such as line-edge…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

应用物理 · 物理学 2024-05-13 Ekaterina Ponizovskaya Devine , Toshishige Yamada , Shih-Yuan Wang , M Saif Islam

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…

介观与纳米尺度物理 · 物理学 2023-03-07 Hon-Loen Sinn , Aravindh Kumar , Eric Pop , Akm Newaz

A cryogenic detector system based on two 3.3 kg high-purity CsI crystals was developed and characterized at approximately 95 K. Each wedge-shaped crystal was coupled to dual-ended 3-inch photomultiplier tubes (PMTs) for scintillation…

仪器与探测器 · 物理学 2025-09-23 Chen'guang Su , Lingquan Kong , Qian Liu , Shi Chen , Wenqian Huang , Kimiya Moharrami , Yangheng Zheng , Jin Li

The electronic and optical properties of low-dimensional semiconductors are typically quite different from those of their bulk counterparts. Yet, the optical gap of two-dimensional copper antimony disulfide (CuSbS$_2$) does not dramatically…

介观与纳米尺度物理 · 物理学 2021-08-24 Kevin M. Conley , Caterina Cocchi , Tapio Ala-Nissila

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…

Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…