中文
相关论文

相关论文: Long-range quantum transport of indirect excitons …

200 篇论文

Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs…

介观与纳米尺度物理 · 物理学 2021-10-13 L. H. Fowler-Gerace , D. J. Choksy , L. V. Butov

Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers…

介观与纳米尺度物理 · 物理学 2024-07-09 L. H. Fowler-Gerace , Zhiwen Zhou , E. A. Szwed , D. J. Choksy , L. V. Butov

Exciton transport is fundamental for understanding transport phenomena in bosonic systems and for exploring excitation energy transfer in materials. Spatially indirect excitons (IXs) are composed of electrons and holes in separated layers.…

介观与纳米尺度物理 · 物理学 2025-09-16 Zhiwen Zhou , W. J. Brunner , E. A. Szwed , H. Henstridge , L. H. Fowler-Gerace , L. V. Butov

Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena…

介观与纳米尺度物理 · 物理学 2018-05-24 E. V. Calman , M. M. Fogler , L. V. Butov , S. Hu , A. Mishchenko , A. K. Geim

Van der Waals heterostructures constitute a platform for investigating intriguing many-body quantum phenomena. In particular, transition-metal dichalcogenide (TMD) hetero-bilayers host long-lived interlayer excitons which exhibit permanent…

介观与纳米尺度物理 · 物理学 2022-09-14 Daniel Erkensten , Samuel Brem , Raül Perea-Causin , Ermin Malic

In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin…

介观与纳米尺度物理 · 物理学 2024-11-05 Zhiwen Zhou , E. A. Szwed , D. J. Choksy , L. H. Fowler-Gerace , L. V. Butov

The properties of van der Waals (vdW) heterostructures are drastically altered by a tunable moir\'e superlattice arising from periodic variations of atomic alignment between the layers. Exciton diffusion represents an important channel of…

Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to…

介观与纳米尺度物理 · 物理学 2024-07-16 Mauro Brotons-Gisbert , Brian D. Gerardot , Alexander W. Holleitner , Ursula Wurstbauer

We studied transport of indirect excitons (IXs) and IX mediated spin transport in a MoSe$_2$/WSe$_2$ van der Waals heterostructure in magnetic fields up to 8 T. We observed the long-range IX transport and the long-range IX mediated spin…

介观与纳米尺度物理 · 物理学 2026-01-21 Zhiwen Zhou , W. J. Brunner , E. A. Szwed , L. H. Fowler-Gerace , L. V. Butov

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in…

介观与纳米尺度物理 · 物理学 2020-02-27 E. V. Calman , L. H. Fowler-Gerace , L. V. Butov , D. E. Nikonov , I. A. Young , S. Hu , A. Mischenko , A. K. Geim

Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual…

Interlayer excitons (IXs) possess a much longer lifetime than intralayer excitons due to the spatial separation of the electrons and holes; hence, they have been pursued to create exciton condensates for decades. The recent emergence of…

Transition metal dichalcogenide heterostructures can host interlayer excitons (IXs), which consist of electrons and holes spatially separated in different layers. IXs possess permanent dipoles and have proven to offer a wealth of novel…

材料科学 · 物理学 2021-11-24 Darien J. Morrow , Xuedan Ma

We studied photoluminescence of spatially indirect excitons (IXs) in a MoSe$_2$/WSe$_2$ van der Waals heterostructure. We observed a quasi-periodic triangular pattern of IXs with the characteristic wavelength of the pattern $\sim$ 2.6…

介观与纳米尺度物理 · 物理学 2026-02-24 Zhiwen Zhou , L. H. Fowler-Gerace , W. J. Brunner , E. A. Szwed , L. V. Butov

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be…

介观与纳米尺度物理 · 物理学 2018-04-24 Simon Ovesen , Samuel Brem , Christopher Linderälv , Mikael Kuisma , Paul Erhart , Malte Selig , Ermin Malic

Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX…

介观与纳米尺度物理 · 物理学 2018-12-05 C. J. Dorow , M. W. Hasling , D. J. Choksy , J. R. Leonard , L. V. Butov , K. W. West , L. N. Pfeiffer

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal…

We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional…

介观与纳米尺度物理 · 物理学 2018-09-19 A. Chaves , J. G. Azadani , V. Ongun Özçelik , R. Grassi , T. Low

Narrow lines in photoluminescence (PL) spectra of excitons are characteristic of low-dimensional semiconductors. These lines correspond to the emission of exciton states in local minima of a potential energy landscape formed by fluctuations…

介观与纳米尺度物理 · 物理学 2026-04-17 Zhiwen Zhou , E. A. Szwed , W. J. Brunner , H. Henstridge , L. H. Fowler-Gerace , L. V. Butov
‹ 上一页 1 2 3 10 下一页 ›