相关论文: Defect engineering of silicon with ion pulses from…
Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
We present experimental studies on ion acceleration from ultra-thin diamond-like carbon (DLC) foils irradiated by ultra-high contrast laser pulses of energy 0.7 J focussed to peak intensities of 5*10^{19} W/cm^2. A reduction in electron…
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…
We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the…
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder…
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with…
A superintense laser pulse illuminating a thin solid-density foil can, in principle, accelerate the entire foil, therefore yielding dense, collimated, and quasi-monoenergetic ion beams. These unique features render radiation pressure…
Experimental results, supported by precise modelling, demonstrate optimisation of a plasma-based injector with intermediate laser pulse energy ($<1$ J), corresponding to a normalised vector potential $a_0 = 2.15$, using ionisation injection…
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G…
Defects in crystalline silicon consisting of a silicon self-interstitial atom and one, two, three, or four hydrogen atoms are studied within density-functional theory (DFT). We search for low-energy defects by starting from an ensemble of…
Collision of laser-driven subrelativistic high density ion flows provides a way to create extremely compressed ion conglomerates and study their properties. This paper presents a theoretical study of the electrodynamic implosion of ions…
A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for…
Radio frequency particle accelerators are ubiquitous in ultra-small and ultrafast science, but their size and cost has prompted exploration of compact and scalable alternatives like the dielectric laser accelerator. We present the first…
Experiments on ion acceleration by irradiation of ultra-thin diamond-like carbon (DLC) foils, with thicknesses well below the skin depth, irradiated with laser pulses of ultra-high contrast and linear polarization, are presented. A maximum…
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…
In this work, we investigate the application of the plasma shutters for heavy ion acceleration driven by a high-intensity laser pulse. We use particle-in-cell (PIC) and hydrodynamic simulations. The laser pulse, transmitted through the…
Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the…
The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing,…
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…