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相关论文: Datta-Das transistor for atomtronic circuits using…

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Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally…

介观与纳米尺度物理 · 物理学 2015-06-24 S. Bandyopadhyay , M. Cahay

In many systems, planar Hall effect wherein transverse signal appears in response to longitudinal stimulus is rooted in spin-orbit coupling. A spin transistor put forward by Datta and Das on the other hand consists of ferromagnetic leads…

介观与纳米尺度物理 · 物理学 2023-06-21 Bijay Kumar Sahoo , Abhiram Soori

A recently published report in the journal Science claims that the Datta-Das Spin Field Effect Transistor has been demonstrated because an exact agreement was found between the voltage modulation in a fabricated structure and a theoretical…

介观与纳米尺度物理 · 物理学 2009-11-03 Supriyo Bandyopadhyay

A Datta-Das spin field effect transistor is built of a one-dimensional weak link, with Rashba spin orbit interactions (SOI), which connects two magnetized reservoirs. The particle and spin currents between the two reservoirs are calculated…

介观与纳米尺度物理 · 物理学 2019-05-28 A. Aharony , O. Entin-Wohlman , K. Sarkar , R. I. Shekhter , M. Jonson

The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the…

介观与纳米尺度物理 · 物理学 2007-05-23 S. A. Avdonin , L. A. Dmitrieva , Yu. A. Kuperin , V. V. Sartan

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped…

介观与纳米尺度物理 · 物理学 2009-11-10 Irene D'Amico

Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…

介观与纳米尺度物理 · 物理学 2023-11-08 Rahnuma Rahman , Supriyo Bandyopadhyay

We propose the scheme of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of the ferromagnetic-nonmagnetic contact is played by a spatially confined cavity polariton BEC. The…

介观与纳米尺度物理 · 物理学 2010-03-30 R. Johne , I. A. Shelykh , D. D. Solnyshkov , G. Malpuech

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

量子物理 · 物理学 2021-12-03 Rozhin Yousefjani , Sougato Bose , Abolfazl Bayat

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the…

介观与纳米尺度物理 · 物理学 2011-04-01 B. Y. Sun , P. Zhang , M. W. Wu

We introduce a spin-orbit coupling scheme, where a retro-reflected laser beam selectively diffracts two spin components in opposite directions. Spin sensitivity is provided by sweeping through a magnetic-field sensitive transition while…

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…

介观与纳米尺度物理 · 物理学 2023-06-28 Franz Eberle , Dieter Schuh , Benedikt Grünewald , Dominique Bougeard , Dieter Weiss , Mariusz Ciorga

We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…

其他凝聚态物理 · 物理学 2009-11-11 D. M. Gvozdic , U. Ekenberg

Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…

介观与纳米尺度物理 · 物理学 2008-04-12 L. S. Levitov , E. I. Rashba

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

材料科学 · 物理学 2009-11-10 S. Sugahara , M. Tanaka

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

We suggest a simple experimental method for probing antiferromagnetic spin correlations of two-component Fermi gases in optical lattices. The method relies on a spin selective Raman transition to excite atoms of one spin species to their…

量子气体 · 物理学 2012-10-12 K. G. L. Pedersen , B. M. Andersen , O. F. Syljuasen , G. M. Bruun , A. S. Sorensen

Motivated by the recent experimental realization of synthetic gauge fields in ultracold atoms, we investigate one-dimensional attractive Fermi gases with a time-dependent gauge flux on the spin sector. By combining the methods of the Bethe…

量子气体 · 物理学 2012-01-10 Shun Uchino , Norio Kawakami

A collection of trapped atomic ions represents one of the most attractive platforms for the quantum simulation of interacting spin networks and quantum magnetism. Spin-dependent optical dipole forces applied to an ion crystal create…

A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…

材料科学 · 物理学 2009-11-13 Biqin Huang , Ian Appelbaum