相关论文: Electrical Programmable Multi-Level Non-volatile P…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including…
Photon echo is a fundamental tool for the manipulation of electromagnetic fields. Unavoidable spontaneous emission noise is generated in this process due to the strong rephasing pulse, which limits the achievable signal-to-noise ratio and…
Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…
With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…
Quantum computing, ultra-low-noise sensing, and high-energy physics experiments often rely on superconducting circuits or semiconductor qubits and devices operating at deep cryogenic temperatures (4K and below). Photonic integrated circuits…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
This paper reviews memory technologies used in Field-Programmable Gate Arrays (FPGAs) for neuromorphic computing, a brain-inspired approach transforming artificial intelligence with improved efficiency and performance. It focuses on the…
Compact, non-volatile optical switches on silicon platforms are essential for reconfigurable photonics, but the strong anisotropy of silicon waveguides leads to polarization-dependent performance. In this paper, we propose a…
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically…
Two classes of Phase Change Materials (PCMs) have emerged as the best candidates for applications requiring the fast reading and writing of data: GeTe-Sb$_{2}$Te$_{3}$ pseudobinary alloys (group 1) and doped Sb-Te compounds near the…
All-optical and fully reconfigurable diffractive optical neural network (DONN) architectures are promising for high-throughput and energy-efficient machine learning (ML) hardware accelerators for broad applications. However, current device…
Although we may be at the end of Moore's law, lowering chip power consumption is still the primary driving force for the designers. To enable low-power operation, we propose a resonant energy recovery static random access memory (SRAM). We…
Two dimensional transition metal dichalcogenides exhibit strong excitonic responses, direct bandgaps, and remarkable nonlinear optical properties, making them highly attractive for integrated photonic, optoelectronic, and quantum…
The reversible phase transition between orthorhombic and cubic phases is demonstrated in all-inorganic perovskite CsPbIBr2 grown by a dual-source vapor-deposition method. The phase transition is actuated via heating and moisture exposure.…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) -…
Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations…
In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of…
Analog photonic solutions offer unique opportunities to address complex computational tasks with unprecedented performance in terms of energy dissipation and speeds, overcoming current limitations of modern computing architectures based on…