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We report experimental observation of 2s exciton radiative emission from monolayer tungsten diselenide, enabled by hexagonal boron nitride protected high-quality samples. The 2s luminescence is highly robust and persists up to 150K,…

介观与纳米尺度物理 · 物理学 2018-01-31 Shao-Yu Chen , Thomas Goldstein , Jiayue Tong , Takashi Taniguchi , Kenji Watanabe , Jun Yan

The newly discovered valley degree of freedom in atomically thin two-dimensional transition metal dichalcogenides (TMD) offers a promising platform to explore rich nonlinear physics, such as spinor Bose-Einstein condensate (BEC) and novel…

介观与纳米尺度物理 · 物理学 2023-01-24 Pasquale Cilibrizzi , Xiaoze Liu , Peiyao Zhang , Chenzhe Wang , Quanwei Li , Sui Yang , Xiang Zhang

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…

介观与纳米尺度物理 · 物理学 2021-11-15 Ao Zhang , Kaike Yang , Yun Zhang , Anlian Pan , Mingxing Chen

We present a theoretical analysis of valley pseudospin control in the transition metal dichalcogenide (TMD) monolayer by utilizing the magnetic proximity effect of 2D magnetic layer and, propose self-consistent analysis of photoluminescence…

介观与纳米尺度物理 · 物理学 2026-05-20 V. N. Mantsevich

Understanding the ultrafast coupling and relaxation mechanisms between valleys in transition metal dichalcogenide semiconductors is of crucial interest for future valleytronic devices. Recent ultrafast pump-probe experiments showed an…

We compute the valley/magnetic phase diagram of mono layers of transition metal dichalcogenides in the hole doped region where spin-orbit effects are particularly relevant. Taking into account the moderate to high local electron-electron…

介观与纳米尺度物理 · 物理学 2018-10-24 João E. H. Braz , B. Amorim , Eduardo V. Castro

We investigate the valley depolarization due to the electron-hole exchange interaction in monolayer MoS$_{2}$. Both the long- and short-range parts of the intra- and inter-valley electron-hole exchange interactions are calculated. We find…

介观与纳米尺度物理 · 物理学 2014-05-13 T. Yu , M. W. Wu

The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward…

材料科学 · 物理学 2017-04-05 Dong Sun , Jiawei Lai , Junchao Ma , Qinsheng Wang , Jing Liu

In this letter, we address the chiral properties of valley exciton-polaritons in a monolayer of WS2 in the regime of strong light-matter coupling with a Tamm-Plasmon resonance. We observe that the valley polarization, which manifests in the…

介观与纳米尺度物理 · 物理学 2017-12-13 N. Lundt , S. Stoll , P. Nagler , A. Nalitov , S. Klembt , S. Betzold , J. W. Goddard , E. Frieling , A. V. Kavokin , C. Schüller , T. Korn , S. Höfling , C. Schneider

Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate…

Chiral interaction between light and two-dimensional transition metal dichalcogenides (2D-TMDs) has recently drawn enormous scientific attention. The optical selection rules of these atomically thin semiconductors allow the attribution of a…

光学 · 物理学 2021-06-08 Irina Komen , Sabrya E. van Heijst , Sonia Conesa-Boj , L. Kuipers

The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…

A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this…

We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an…

介观与纳米尺度物理 · 物理学 2018-07-04 Yuan Li , H. B. Zhu , G. Q. Wang , Y. Z. Peng , J. R. Xu , Z. H. Qian , R. Bai , G. H. Zhou , C. Yesilyurt , Z. B. Siu , M. B. A. Jalil

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

We study the exciton states in the symmetrically biased dice model, the electronic structures of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the model describes a two-dimensional semiconductor with…

介观与纳米尺度物理 · 物理学 2023-04-27 Lei Hao

The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through…

Spin or valley degrees of freedom in condensed matter have been proposed as efficient information carriers towards next generation spintronics. It is therefore crucial to develop effective strategies to generate and control spin or…

介观与纳米尺度物理 · 物理学 2023-04-26 Ying Shi , Yusong Gan , Yuzhong Chen , Yubin Wang , Sanjib Ghosh , Alexey Kavokin , Qihua Xiong

The stability of valley polarized electron states is crucial for the development of valleytronics. A long relaxation time of the valley polarization is required to enable operations to be performed on the polarized states. Here we…

In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…

介观与纳米尺度物理 · 物理学 2017-03-07 Xing-Tao An , Jiang Xiao , M. W. -Y. Tu , Hongyi Yu , Vladimir I. Fal'ko , Wang Yao