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We report on the isolation of single SiV$^-$ centers in nanodiamonds. We observe the fine-structure of single SiV$^-$ center with improved inhomogeneous ensemble linewidth below the excited state splitting, stable optical transitions, good…

NV centers in diamond are generally recognized as highly promising as indefinitely stable highly efficient single-photon sources. We report an experimental quantification of the brightness, radiative decay rate, nonradiative decay rate and…

光学 · 物理学 2015-06-12 Abbas Mohtashami , A. Femius Koenderink

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…

Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission…

介观与纳米尺度物理 · 物理学 2020-11-10 G. C. Vásquez , M. E. Bathen , A. Galeckas , C. Bazioti , K. M. Johansen , D. Maestre , A. Cremades , Ø. Prytz , A. M. Moe , A. Yu. Kuznetsov , L. Vines

We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in…

介观与纳米尺度物理 · 物理学 2019-06-26 Sumin Choi , Viatcheslav N. Agafonov , Valery A. Davydov , L. F. Kulikova , Taras Plakhotnik

Color centers in diamond have attracted much interest as candidates for optically active, solid-state quantum bits. Of particular interest are inversion-symmetric color centers based on group-IV impurities in diamond because they emit…

量子物理 · 物理学 2019-05-21 Alison E. Rugar , Constantin Dory , Shuo Sun , Jelena Vučković

We demonstrate cavity-enhanced Raman emission from a single atomic defect in a solid. Our platform is a single silicon-vacancy center in diamond coupled with a monolithic diamond photonic crystal cavity. The cavity enables an unprecedented…

Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the…

量子物理 · 物理学 2021-08-02 Elisa Londero , Gergő Thiering , Lukas Razinkovas , Adam Gali , Audrius Alkauskas

The nitrogen-vacancy (NV) center in diamond has an optically addressable, highly coherent spin. However, an NV center even in high quality single-crystalline material is a very poor source of single photons: extraction out of the high-index…

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid…

Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, non-bleaching emission line at 738\,nm. Two-photon excitation of this fluorescence offers the possibility of…

Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation - in number, position, and coherence - in nanophotonic devices…

Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in…

材料科学 · 物理学 2025-04-17 Yihuang Xiong , Yizhi Zhu , Shay McBride , Sinéad M. Griffin , Geoffroy Hautier

Motivated by the success of group IV colour centres in nanodiamonds (NDs) for hybrid technology requiring a single photon source, we study single germanium-vacancy (GeV$^-$) centres in NDs at room temperature with size rangingfrom 10 to 50…

The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the…

Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic,…

材料科学 · 物理学 2023-09-08 Artur Pambukhchyan , Sizhe Weng , Indu Aravind , Stephen B. Cronin , Susumu Takahashi

The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions,…

The negatively charged tin-vacancy center in diamond (SnV$^-$) is an excellent solid state qubit with optically-addressable transitions and a long electron spin coherence time at elevated ($\sim1.7$ K). However, implementing scalable…

The nitrogen-vacancy center in diamond, owing to its optically addressable and long-lived electronic spin, is an attractive resource for the generation of remote entangled states. However, the center's low native fraction of coherent photon…

The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission…