相关论文: Clean quantum point contacts in an InAs quantum we…

Quantum point contacts are fundamental building blocks for mesoscopic transport experiments and play an important role in recent interference- and fractional quantum Hall experiments. However, it is not clear how electron-electron…

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2…

Scanning gate microscopy of quantum point contacts (QPC) in the integer quantum Hall regime is considered in terms of the scattering wave functions with a finite-difference implementation of the quantum transmitting boundary approach.…

Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…

The intrinsic 4-point coupling, defined in terms of a truncated 4-point function at zero momentum, provides a well-established measure for the interaction strength of a QFT. We show that this coupling can be computed non-perturbatively and…

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the…

Recent theories suggest that the excitations of certain quantum Hall states may have exotic braiding statistics which could be used to build topological quantum gates. This has prompted an experimental push to study such states using…

We calculate the conductance of a ballistic point contact to a superconducting wire, produced by the s-wave proximity effect in a semiconductor with spin-orbit coupling in a parallel magnetic field. The conductance G as a function of…

We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…

We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…

Features below the first conductance plateau in ballistic quantum point contacts (QPCs) are often ascribed to electron interaction and spin effects within the single mode limit. In QPCs with a highly asymmetric geometry, we observe sharp…

InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. These QWs rely on…

We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx)…

One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an…

We present atomistic computations within an empirical pseudopotential framework for the electron $s$-shell ground state $g$ tensor of InGaAs quantum dots (QDs) embedded to host matrices that grant electronic confinement. A large structural…

We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall…

Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic…

Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is…

Realizing a large Land\'{e} $g$-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic…

We report on developing split-gate quantum point contacts (QPCs) that have a tunable length for the transport channel. The QPCs were realized in a GaAs/AlGaAs heterostructure with a two- dimensional electron gas (2DEG) below its surface.…