相关论文: Memristor Compact Model with Oxygen-Vacancy Concen…
We propose a model with few parameters, for vacancy-induced ferromagnetism based on a correlated model for anions (oxygen orbitals) with random potentials that represent cation vacancies. There is a range of potential strength for which…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code {\tt oopd1} to explore the spatio-temporal evolution of the electron heating mechanism in a capacitively coupled oxygen discharge in the pressure range…
Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching…
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work…
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response…
Combination of electric fields and Joule self-heating is used to change the oxygen stoichiometry and promote oxygen vacancy drift in a free-standing $\mathrm{(La,Sr)MnO_3}$ thin film microbridge placed in controlled atmosphere. By…
The consideration of oxygen vacancies influence on the relaxors with perovskite structure was considered in the framework of Landau-Ginzburg-Devonshire phenomenological theory. The theory applicability for relaxors is based on the existence…
Because the local concentration of vacancies in any material is bounded, their motion must be accompanied by nonlinear effects. Here we look for such effects in a simple model for electric field driven vacancy motion in memristors, solving…
Current-density-functional theory is used to perturbatively calculate single-particle energies of open-shell atoms prepared in a current-carrying state. We focus on the highest occupied such energy, because its negative is, in principle,…
The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament…
We report on the characterization of Pt-YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces, focusing on how oxygen vacancies content ($\delta$) affects electrical transport mechanisms. Our study examines four Pt-YBa$_2$Cu$_3$O$_{7-\delta}$ samples with…
In this work we study the stabilization of the orthorhombic phases in small Hf0.5Zr0.5O2 nanoparticles (average size ~ 7 nm) annealed under different oxygen partial pressures. Concentration of the oxygen vacancies, which is determined by…
In this paper, we build a general modelling framework for memristors, suitable for the simulation of event-based systems such as hardware spiking neural networks, and more generally, neuromorphic computing systems composed of three…
We propose a model that describes phase transition including meta\-stable states present in the van der Waals Equation of State. From a convex optimization problem on the Helmoltz free energy of a mixture, we deduce a dynamical system that…
Memristive devices have gained significant attention for their potential in next-generation non-volatile memory and neuromorphic computing architectures. Among emerging candidates, transition metal oxides have proven particularly promising.…
This work presents the mathematical modeling and numerical investigation of a thermo-controlled Micro-Electro-Mechanical System (MEMS) obtained by coupling an HP memristor with mechanical and electrical resonators. Using the linear drift HP…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…