相关论文: A theory for anisotropic magnetoresistance in mate…
Several strongly correlated metals display B-linear magnetoresistance (LMR) with a universal slope, in sharp contrast to the $B^2$ scaling predicted by Fermi liquid theory. We provide a unifying explanation of the origin of LMR by focusing…
Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in…
Using the electron scattering theory, we obtain analytic expressions for anisotropic magnetoresistance (AMR) ratios for ferromagnets with a crystal field of tetragonal symmetry. Here, a tetragonal distortion exists in the [001] direction,…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
We derive the general expression of the anisotropic magnetoresistance (AMR) ratio of ferromagnets for a relative angle between the magnetization direction and the current direction. We here use the two-current model for a system consisting…
Multipolar Kondo systems offer unprecedented opportunities for designing astonishing quantum phases and functionalities beyond spin-only descriptions. A model material platform of this kind is the cubic heavy-fermion system…
We present the Co-Gd composition dependence of the spin-Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) for ferrimagnetic Co100-xGdx / Pt bilayers. With Gd concentration x, its magnetic moment increasingly competes with…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested…
We study anisotropic magnetoresistance (AMR) in a spin-polarized two-dimensional electron gas with Rashba spin-orbit coupling and nonmagnetic disorder collision. We show that AMR exists, arising from the combined effect of in-plane…
Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR effects in these materials are typically weak. Recent…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
In the present study, we demonstrate the measurement of resistivity tensor ($\rho$) along the magnetic axes of a polycrystalline film of ferromagnetic permalloy (Py). To this end, conventional Hall-bar and a more recent extended van der…
We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…
We investigate ferroaxial magnets, a new class of spin-order-driven multiferroic magnets in which magnetic ordering induces mirror-symmetry breaking while preserving both time-reversal and spatial-inversion symmetries. These systems exhibit…
We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to…
Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes could…
The Planar Hall effect (PHE) in topological materials has been a subject of great interest in recent years. Generally, it is understood to originate from the chiral-anomaly (CA) induced charge pumping between doubly degenerate Weyl nodes.…
Nanoscale bilayers containing at least one magnetic layer exhibit universal unusual anisotropic magnetoresistance (UAMR) and unidirectional magnetoresistance (UMR). They are currently understood through various mechanisms related to the…