相关论文: Quantifying Spin-Orbit Torques in Antiferromagnet/…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
We study inserting Co layer thickness-dependent spin transport and spin-orbit torques (SOTs) in the Pt/Co/Py trilayers by spin-torque ferromagnetic resonance. The interfacial perpendicular magnetic anisotropy energy density ($K_s =…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
Altermagnetism is an unconventional form of antiferromagnetism characterized by momentum-dependent spin polarization of electronic states and zero net magnetization, arising from specific crystalline symmetries. In the presence of…
While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative…
The spin anomalous Hall effect (SAHE) in ferromagnetic metals, which can generate spin-orbit torque to rotate the magnetization of another ferromagnetic layer through a non-magnetic spacer in magnetic junctions, has attracted much…
Using the non-equilibrium Green's function technique, we calculate spin-orbit torques in a Mn$_2$Au/heavy-metal bilayer, where the heavy metal (HM) is W or Pt. Spin-orbit coupling (SOC) in the bulk of Mn$_2$Au generates strong fieldlike…
We report systematic measurements of anomalous Hall effect(AHE) and spin orbit torques(SOT) in MnGa/IrMn films,, in which a single MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of…
Harmonic Hall measurements were performed on a series of ferromagnetic metal/heavy metal (FM/HM) bilayers consisting of Permalloy (Py) as the FM and beta-Tungsten (W) as the HM, and the efficiencies of the two orthogonal components of the…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…
We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in…
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…
In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can…
We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt…
Motivated by recent experiments observing spin-orbit torque (SOT) acting on the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of a three-dimensional topological insulator (TI), we investigate the origin of the SOT…
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear…
Non-collinear antiferromagnets (nAFMs) with a small net magnetic moment offer new opportunities for ultrafast spintronic devices, owing to unique physical properties. While in ferromagnets and collinear AFMs the spin current polarization is…