相关论文: Quantifying Spin-Orbit Torques in Antiferromagnet/…

We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…

High-temperature superconductivity (HTSC) in copper oxides emerges on a layered CuO2 plane when an antiferromagnetic Mott insulator is doped with mobile hole carriers. We review extensive studies of multilayered copper oxides by…

We compute the spin-orbit torque in a transition metal heterostructure using Slater-Koster parameterization in the two-center tight-binding approximation and accounting for d-orbitals only. In this method, the spin-orbit coupling is modeled…

Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the…

The anomalous Hall effect (AHE), typically observed in ferromagnetic (FM) metals with broken time-reversal symmetry, depends on electronic and magnetic properties. In Co$_{3}$Sn$_{2-x}$In$_{x}$S$_{2}$, a giant AHE has been attributed to…

We study the behavior of non-equilibrium spin density and spin-orbit torque in a topological insulator - antiferromagnet heterostructure. Unlike ferromagnetic heterostructures where Dirac cone is gapped due to time-reversal symmetry…

Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…

Using the linear response formalism for the spin-orbit torque (SOT) we compute from first principles the SOT in a system of two layers of L1$_0$-FePt(001) deposited on an fcc Pt(001) substrate of varying thickness. We find that at room…

Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…

Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we…

Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…

Motivated by recent progress in the realization of artificial gauge fields and $SU(N)$ Mott insulators using alkaline-earth-like atoms in optical lattices, we develop an unbiased $SU(N)$ real-space dynamical mean-field theory (DMFT)…

Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…

In this work, we experimentally investigate spin and orbital torque phenomena using the spin-torque ferromagnetic resonance (ST-FMR) technique in a series of bilayer systems composed of different normal metal (NM) materials. Permalloy (Py)…

Domain wall (DW) dynamics in antiferromagnetic (AFM) systems offer the advantages over their ferromagnetic counterparts of having faster and more energy efficient manipulation due to the absence of net magnetization, leading to reduced…

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite…

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…

The discovery of intrinsic spin orbit fields in noncentrosymmetric ferromagnets has attracted considerable interest for both fundamental studies and technological applications. However, once such materials are synthesized, the strength of…

Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the…

The influence of a single magnetic cluster in a non-magnetic host metal on the spin current $\mathbf{j}^{(s)}$ and the charge current $\mathbf{j}$ in the vicinity of a ferromagnetic STM tip is studied theoretically. Spin-flip processes due…