相关论文: Understanding Hot Carrier Reliability in FinFET Te…
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. Interface charge traps arising from the exposure to chemicals,…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
A novel approach for modeling Dark Count Rate (DCR) drift in Single-Photon Avalanche Diodes (SPADs) is proposed based on Hot-Carrier Degradation (HCD) inducing silicon-hydrogen bond dissociation at the Si/SiO2 interface. The energy and the…
Failures attributed to hydrogen embrittlement are a major concern for metals so a better understanding of damage micro-mechanisms and hydrogen diffusion within the metal is needed. Local concentrations depend on transport phenomena…
The current understanding of charge transfer dynamics in Charge-Coupled Devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the inter-phase…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
Diamond detectors are attractive for operation in harsh radiation environments because they combine radiation tolerance, fast signal formation, and low leakage current. Realistic detector-response simulations require an accurate description…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT).…
We apply high-throughput DFT calculations and symbolic regression to hybrid inorganic/organic interfaces with the intent to extract physically meaningful correlations between the adsorption-induced work function modifications and the…
This paper focuses on robust stability and $H_\infty$ performance analyses of hybrid continuous/discrete time linear multi-rate control systems in the presence of parametric uncertainties. These affect the continuous-time plant in a…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
The vision of a hydrogen economy demands efficient platforms to close the gap between sustainable proton sources and solid-state hydrogen carriers. Metal hydrides serve as key carriers, yet their synthesis remains constrained by the…
Density Functional Theory (DFT) calculations of electrode material properties in high energy density storage devices like lithium batteries have been standard practice for decades. In contrast, DFT modelling of explicit interfaces in…
Ultra-fast electronic phenomena originating from finite temperature, such as nonlinear optical excitation, can be simulated with high fidelity via real-time time dependent density functional theory (rt-TDDFT) calculations with hybrid…
The high critical superconducting temperatures ($T_c$s) of metal hydride phases with clathrate-like hydrogen networks have generated great interest. Herein, we employ the Density Functional Theory-Chemical Pressure (DFT-CP) method to…
Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge…
Batteries play a critical role in microgrid energy management by ensuring power balance, enhancing renewable utilization, and reducing operational costs. However, battery degradation poses a significant challenge, particularly under extreme…
We investigate the trade-offs between accuracy and efficiency for several flavors of the dissipative mode-space NEGF algorithm with the self-consistent Born approximation for DFT Hamiltonians. Using these models, we then demonstrate the…