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Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will…

Boron phosphide (BP) is a (super)hard semiconductor constituted of light elements, which is promising for high demand applications at extreme conditions. The behavior of BP at high temperatures and pressures is of special interest but is…

The deposition of boron-doped amorphous carbon thin films on SiO2 substrate was achieved via a focused ion beam-assisted chemical vapor deposition of triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of boron in the…

Boron doped amorphous conducting carbon films show MI transition induced by doping. In this paper we discuss the ac conductivity of the films, which lie on the insulating side of MI transition. The ac conductivity data is analyzed as a…

无序系统与神经网络 · 物理学 2007-05-23 P. N. Vishwakarma

Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent…

介观与纳米尺度物理 · 物理学 2022-07-05 Erik Piatti , Alberto Pasquarelli , Renato S. Gonnelli

Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at…

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a…

We investigate unusual surface plasmons polariton (SPP) propagation and light-matter interactions in ultrathin black phosphorus (BP) films, a 2D material that exhibits exotic electrical and physical properties due to its extremely…

介观与纳米尺度物理 · 物理学 2016-10-12 D. Correas-Serrano , J. S. Gomez-Diaz , A. Alvarez Melcon , Andrea Alù

Research on black phosphorus (BP) has been experiencing a renaissance over the last few years, after the demonstration that few-layer BP exhibits high carrier mobility and a thickness-dependent band gap. For a long time, bulk BP is also…

材料科学 · 物理学 2017-05-02 Renyan Zhang , John Waters , Andre K. Geim , Irina V. Grigorieva

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to…

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…

材料科学 · 物理学 2020-02-12 Jisoo Moon , Zengle Huang , Weida Wu , Seongshik Oh

Spontaneous orientation polarization (SOP) of polar molecules is formed in vacuum-deposited films by tilting their permanent dipole moment against the substrate surface direction. In this study, we developed SOP molecules with high…

材料科学 · 物理学 2026-02-18 Masaki Tanaka , Rena Sugimoto , Nobuhumi Nakamura

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…

材料科学 · 物理学 2015-05-27 B. Zhang , Y. Yao , R. Patterson , S. Shrestha , M. A. Green , G. Conibeer

Copper-doped zinc sulphide (ZnS:Cu) thin films were synthesized through pulsed laser ablation in an inert background gas on stationary and rotating substrates, and a comprehensive opto-electrical characterisation is presented. The…

Optical devices capable of suppressing diffraction nature of light are of great technological importance to many nanophotonic applications. One important technique to achieve diffractionless optics is to exploit field canalization effect.…

光学 · 物理学 2021-12-16 Po-Han Chang , Charles Lin , Amr S. Helmy

Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…

The amorphous conducting carbon films have been prepared at three different preparation temperatures with different boron-doping levels. The structural and transport properties of the same have been studied. X-ray diffraction measurements…

无序系统与神经网络 · 物理学 2007-05-23 P. N. Vishwakarma , S. V. Subramanyam

We report optical reflectivity study on pure and boron-doped diamond films grown by a hot-filament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron-doping.…

超导电性 · 物理学 2009-11-11 Dan Wu , Y. C. Ma , Z. L. Wang , Q. Luo , C. Z. Gu , N. L. Wang , C. Y. Li , X. Y. Lu , Z. S. Jin

Two-dimensional (2D) $\beta$-TeO$_2$ has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the underlying mechanism behind its $p$-type…

介观与纳米尺度物理 · 物理学 2025-01-08 Rafael Costa-Amaral , Soungmin Bae , Vu Thi Ngoc Huyen , Yu Kumagai

We report the transmission over a wide frequency range (far infrared - visible) of pristine and hole-doped, free-standing carbon nanotube films at temperatures between 50 K and 300 K. Optical constants are estimated by Kramers-Kronig…

材料科学 · 物理学 2013-05-29 F. Borondics , K. Kamaras , M. Nikolou , D. B. Tanner , Z. H. Chen , A. G. Rinzler
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