相关论文: Valley-exchange coupling probed by angle-resolved …
The photoluminescence (PL) in monolayer transition metal dichalcogenides (TMDs) is dominated by recombination of electrons in the conduction band with holes in the spin-orbit split valence bands, and there are two distinct emission features…
The illumination of a single-layer transition metal dichalcogenide with an elliptically-polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the…
We apply a microscopic theory of exciton-polaritons in cavity-confined monolayer transition-metal dichalcogenides including both optical polarizations in the monolayer plane, allowing to describe how chiral cavity photons interact with the…
Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that…
The interplay of Ising spin-orbit coupling and non-trivial band topology in transition metal dichalcogenides (TMDs) produces anomalous transport and optical properties that are very different from a regular 2D electron gas. The…
Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions.…
In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By…
Magnetic field is a powerful tool for the manipulation of material's electronic and optical properties. In the domain of transition metal dichalcogenide monolayers, it allows one to unveil the spin, valley, and orbital properties of…
In crystals, energy band extrema in momentum space can be identified by their valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier analogous to electronic…
We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an…
We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe$_2$/WSe$_2$ twisted heterobilayers, supported by quantum Monte…
We report circularly-polarized optical reflection spectroscopy of monolayer WS$_2$ and MoS$_2$ at low temperatures (4~K) and in high magnetic fields to 65~T. Both the A and the B exciton transitions exhibit a clear and very similar Zeeman…
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures…
In stacks of transition metal dichalcogenide monolayers with arbitrary twisting angles, we explore a new class of bright excitons arising from the pronounced F\"{o}rster coupling, whose dimensionality is tuned by its in-plane momentum. The…
The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…
Experimental evidence of strong coupling between excitons confined in a quantum well and the photonic modes of a two-dimensional dielectric lattice is reported. Both resonant scattering and photoluminescence spectra at low temperature show…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…
Atomically thin transition metal dichalcogenides (TMDs) possess coupling of spin and valley degrees of freedom, making them promising for spin-valleytronics. ln monolayer TMDs, the emission helicity is locked to the valleys as a consequence…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…