相关论文: Design of a SOIMUMPs Inertial Sensor and readout C…
This paper presents the design, simulation, and analytical modeling of the single proposed axis MEMSbased capacitive accelerometer. Analytical modeling has been done for frequency and displacement sensitivity. The performance of the…
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform…
This paper presents the study of an original closed-loop conditioning approach for fully-integrated convective inertial sensors. The method is applied to an accelerometer manufactured on a standard CMOS technology using an auto-aligned bulk…
With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the…
Various chips for the silicon sensors measurements are described. These chips are based on 0.35 um and 0.18um CMOS technology. Several analog chips together with self-trigger /derandomizer one allow to measure silicon sensors designed for…
The CMS Inner Tracker, made of silicon pixel modules, will be entirely replaced prior to the start of the High Luminosity LHC period. One of the crucial components of the new Inner Tracker system is the readout chip, being developed by the…
This study presents the design, fabrication, and test of a micro accelerometer with intrinsic processing capabilities, that integrates the functions of sensing and computing in the same MEMS. The device consists of an inertial mass…
The progress of the Internet of Things(IoT) technologies and applications requires the efficient low power circuits and architectures to maintain and improve the performance of the increasingly growing data processing systems. Memristive…
We analyze theoretically the sensitivity of accelerometry and rotation sensing with a point source interferometer employing large momentum transfer (LMT) and present a design of an inertial measurement unit (IMU) that can measure rotation…
High channel density and space restrictions required that the front end electronics integrated into the active elements of calorimeter. For that purpose novel readout chain base on Application-Specific Integrated Circuit (ASIC) designed for…
The CMS collaboration is building a new inner tracking pixel detector for the High-Luminosity LHC. Each pixel readout chip will be controlled with a single serial input stream at 160 Mbps and will send out data via four current mode logic…
We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal,…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
Recent scientific and technological advances have enabled the detection of gravitational waves, autonomous driving, and the proposal of a communications network on the Moon (Lunar Internet or LunaNet). These efforts are based on the…
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit…
The first generation of Single electron Sensitive Read Out (SiSeRO) amplifiers, employed as on-chip charge detectors for charge-coupled devices (CCDs) have demonstrated excellent noise and spectral performance: a responsivity of around 800…
We present the characterization of a readout Application-Specific Integrated Circuit (ASIC) for the CMS Endcap Timing Layer (ETL) of the High-Luminosity LHC upgrade with charge injection. The ASIC, named ETROC and developed in a 65 nm CMOS…
A high accuracy and high sensitivity system architecture is proposed for the read-out circuit of electrical impedance tomography system-on-chip. The switched ratiometric technique is applied in the proposed architecture. The proposed system…
The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide…
A novel readout architecture that uses multiple non-destructive floating-gate amplifiers to achieve sub-electron readout noise in a thick, fully-depleted silicon detector is presented. This Multi-Amplifier Sensing Charge-Coupled Device…