Sense amplifier design using CMOS-memristor circuits
Emerging Technologies
2019-08-28 v2
Abstract
With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the design in terms of on-chip area, power efficiency, resistance to temperatures and speed. To achieve this, NOT gates in the circuit were constructed using memristor and CMOS. The main aim of the paper is to check the effect of memristors on characteristics of sense amplifier. The design was tested on Conventional Current Sense Amplifier (CSA) circuit. Changes in power, area, sensing delay and offset are reported in the paper.
Keywords
Cite
@article{arxiv.1805.07676,
title = {Sense amplifier design using CMOS-memristor circuits},
author = {Yerlan Amanzholov and Olga Krestinskaya},
journal= {arXiv preprint arXiv:1805.07676},
year = {2019}
}
Comments
the paper is no more relevant and up-to-date