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We study the electronic properties of the heterobilayer of vanadium and iron oxychlorides, VOCl and FeOCl, two layered air stable van der Waals insulating oxides with different types of antiferromagnetic order in bulk: VOCl monolayers are…

介观与纳米尺度物理 · 物理学 2021-04-19 F. Mahrouche , K. Rezouali , Z. C. Wang , J. Fernández-Rossier , A. Molina-Sánchez

We investigate the effect of Mn substitution in Fe$_2$Ti$_{1-x}$Mn$_x$Sn on electronic structure and magnetic and electrical transport properties. The spin-polarized density of states calculations using density-functional theory (DFT)…

材料科学 · 物理学 2025-08-20 Kulbhushan Mishra , Shishir Kumar Pandey , S. Chaudhuri , Rajeev Rawat , P. A. Bhobe

A novel approach to investigation of correlation effects in the electronic structure of magnetic crystals which takes into account a frequency dependence of the self energy (so called ``LDA++ approach'') is developed. The fluctuation…

强关联电子 · 物理学 2009-10-31 M. I. Katsnelson , A. I. Lichtenstein

We investigate half-metallicity in [001] stacked (CrAs)$_n$/(GaAs)$_n$ heterostructures with $n \leq 3$ by means of a combined many-body and electronic structure calculation. Interface states in the presence of strong electronic…

材料科学 · 物理学 2015-05-20 L. Chioncel , I. Leonov , H. Allmaier , F. Beiuseanu , E. Arrigoni , T. Jurcut , W. Pötz

We present electrical-resistivity measurements on the prototypical heavy-fermion ferromagnet UGe$_2$ under pulsed magnetic field up to 60~T. An anisotropic field-induced suppression of the electronic correlations is revealed. The electrical…

强关联电子 · 物理学 2026-03-11 K. Somesh , T. Thebault , V. Taufour , D. Aoki , F. Duc , G. Knebel , D. Braithwaite , W. Knafo

The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are investigated to explore the sensitivity of the magnetic states to temperature, magnetic field, and sample history. The data reveal a moderate anisotropy in the…

Antiferromagnetic (AFM) FePS3 has gained significant interest recently for its potential applications in spin-related devices. A single layer is comprised of a honeycomb network, stabilized by long-range spin-exchange interactions, with a…

Plutonium (Pu), in which the 5$f$ valence electrons always wander the boundary between localized and itinerant states, exhibits quite complex crystal structures and unprecedentedly anomalous properties with respect to temperature and…

强关联电子 · 物理学 2020-03-26 Li Huang , Haiyan Lu

Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X$\neq$Y=Cl, Br and I) monolayers are predicted to be in-plane…

材料科学 · 物理学 2023-07-19 San-Dong Guo , Xiao-Shu Guo , Shuo-Ning Si , Kai Cheng , Ke Wang , Yee Sin Ang

Perpendicular magnetic anisotropy (PMA) energy up to $K_{\mathrm{u}}=6.1\pm0.8$ MJ m$^{-3}$ is demonstrated in this study by inducing large lattice-distortion exceeding 3% at room temperature in epitaxially distorted cobalt ferrite Co$ _{x}…

材料科学 · 物理学 2021-12-03 Hiroshige Onoda , Hiroaki Sukegawa , Jun-ichiro Inoue , Hideto Yanagihara

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($\nu$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $\nu=1/2$…

介观与纳米尺度物理 · 物理学 2023-03-21 Md. Shafayat Hossain , M. K. Ma , Y. J. Chung , S. K. Singh , A. Gupta , K. W. West , K. W. Baldwin , L. N. Pfeiffer , R. Winkler , M. Shayegan

Two-dimensional (2D) Janus materials hold a great importance in spintronic and valleytronic applications due to their unique lattice structures and emergent properties. They intrinsically exhibit both an in-plane inversion and out-of-plane…

The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…

材料科学 · 物理学 2023-12-13 San-Dong Guo , Yu-Ling Tao , Zi-Yang Zhuo , Gangqiang Zhu , Yee Sin Ang

Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in…

材料科学 · 物理学 2017-03-24 Zhenchao Wen , Hiroaki Sukegawa , Takeshi Seki , Takahide Kubota , Koki Takanashi , Seiji Mitani

The planar Hall effect (PHE) is a powerful tool for characterizing Weyl semimetals (WSMs). Here, we inves- tigate the PHE in general anisotropic WSMs under strong magnetic fields. We analytically derive the Landau levels (LLs) and their…

介观与纳米尺度物理 · 物理学 2025-04-25 Fu-Yang Chen , Zhuo-Hua Chen , Hou-Jian Duan , Mou Yang , Rui-Qiang Wang , Ming-Xun Deng

We present an ab initio study of electronic correlation effects in a molecular cluster derived from the hexanuclear ferric wheel [LiFe6(OCH3)12-(dbm)6]PF6. The electronic and magnetic properties of this cluster have been studied with…

材料科学 · 物理学 2007-05-23 H. Nieber , K. Doll , G. Zwicknagl

Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…

材料科学 · 物理学 2023-03-22 Yukie Kitaoka , Hiroshi Imamura

We investigated perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4(001) heterostructures prepared by electron-beam evaporation. Using an optimized structure, we obtained a large PMA energy ~1…

材料科学 · 物理学 2018-06-04 Qingyi Xiang , Ruma Mandal , Hiroaki Sukegawa , Yukiko K. Takahashi , Seiji Mitani

Ferroelectricity is usually found in compound materials composed by different elements. Here, based on first-principles calculations, we reveal the first example of spontaneous electrical polarization and ferroelectricity in stable…

材料科学 · 物理学 2017-06-20 Chengcheng Xiao , Fang Wang , Shengyuan A. Yang , Yunhao Lu

Novel broken symmetry states can spontaneously form due to Coulomb interactions in electronic systems with multiple internal degrees of freedom. Multi-valley materials offer an especially rich setting for the emergence of such states, which…