相关论文: Ultrahigh-sensitivity optical power monitor for Si…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their…
A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an…
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results…
At the core of an ideal single photon detector is an active material that ideally absorbs and converts photons to discriminable electronic signals. A large active material volume favours high-efficiency absorption, but often at the expense…
Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics. Telecom-wavelength…
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to…
Involving deterministically nonlinear photoresponse in on-chip photodetector is intriguing to develop sophisticated functions in photonic integrated circuits, such as in-sensor computing and optoelectronic mixing, though the corresponding…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
We describe a novel GaAs/AlGaAs double-quantum-well device for the infrared photon detection, called Charge-Sensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a…
Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…
The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical…
Photonic integrated circuits play a central role in current and future applications such as communications, sensing, ranging, and information processing. Photonic quantum computing will also likely require an integrated optics architecture…
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their…
In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As…