相关论文: Low Gain Avalanche Detectors with Good Time Resolu…

LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing…

We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…

Low-Gain Avalanche Diode (LGAD) sensor is one of candidate sensors for the tracker at future hadron collider experiments. To use this sensor as a tracking detector, AC-LGAD sensor is being developed which has both timing and spatial…

This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary of their measured characteristics. This includes an analysis…

Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low…

Low-Gain Avalanche Diodes are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the Low-Gain…

The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5 - 2.5e15…

Low-Gain Avalanche Diodes (LGADs) are fast silicon sensors with internal charge multiplication and are key candidates for precision timing layers in future high-energy hadron colliders. Their operation in harsh radiation environments,…

The timing measurement of charged particles using silicon detector is widely used in synchrotron source as X-ray detectors, in time-of-flight mass spectrometer and especially in large collider experiment. To reduce the drastically event…

AC-Coupled LGAD (AC-LGAD) is a new 4D detector developed based on the Low Gain Avalanche Diode (LGAD) technology, which can accurately measure the time and spatial information of particles. The Institute of High Energy Physics (IHEP)…

The Low-Gain Avalanche Diode (LGAD) is a semiconductor detector capable of achieving excellent timing resolution (~20 ps) for minimum ionizing particles (MIPs). To realize a pixelated detector with both high timing precision and spatial…

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal…

Impact ionization in silicon devices has been extensively studied and several models for a quantitative description of the impact ionization coefficients have been proposed. We evaluate those models against gain measurements on Low Gain…

This paper presents results that take a critical step toward proving 10 ps timing resolution's feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of…

The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detectors (LGADs). We present a suite of results combining…

Low-Gain Avalanche Detectors (LGADs) are the leading 4D sensing technology selected for use in the High Luminosity Large Hadron Collider (HL-LHC). However, their proximity to the interaction point makes them highly susceptible to…

Low Gain Avalanche Diodes (LGADs) are thin (20-50 $\mu m$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the…

4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC…

In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is…

Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated…