相关论文: Antisymmetric magnetoresistance due to domain wall…
While magnetoresistance (MR) has generally been found to be symmetric in applied field in non-magnetic or magnetic metals, we have observed antisymmetric MR in Co/Pt multilayers. Simultaneous domain imaging and transport measurements show…
Large negative magnetoresistance (MR) observed in transport measurements of hcp Co films with stripe domains were recently reported and interpreted in terms of a novel domain wall (DW) scattering mechanism. Here detailed MR measurements,…
We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
Recent measurements of the magnetoresistance (MR) of amorphous superconducting thin films in tilted magnetic fields have displayed several surprising experimental details, in particular a strong dependence of the MR on field angle at low…
We present a theoretical analysis of recent experimental measurements of magnetoresistance in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. The model reproduces the field-antisymmetric anomalies observed in the longitudinal…
The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current:…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system…
We demonstrate here that ultrathin ferromagnetic Pt/Co/Pt films with perpendicular magnetic anisotropy exhibit a sizeable Dzyaloshinskii-Moriya interaction (DMI) effect. Such a DMI effect modifies the domain-wall (DW) energy density and…
Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…
We study the magnetic properties of perpendicularly magnetised Pt/Co/Ir thin films and investigate the domain wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultra-thin films. Measurements of the…
We present an analytical theory to describe three-dimensional magnetic textures in perpendicularly magnetized magnetic multilayers that arise in the presence of magnetostatic interactions and the Dzyaloshinskii-Moriya interaction (DMI). We…
We demonstrate the presence of an important anisotropic magnetoresistance contribution to the domain wall resistance recently measured in thin-film (Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain wall…
The domain wall response under constant external magnetic fields reveals a complex behavior where sample disorder plays a key role. Furthermore, the response to alternating magnetic fields has only been explored in limited cases and…
We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more…
The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of the interfacial Dzyaloshinskii-Moriya interaction…
Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn,…
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wall surface energy was obtained by analyzing the spatial…
We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR…