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相关论文: Valence skipping, internal doping and site-selecti…

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We provide experimental and theoretical evidence for a novel type of pressure-induced insulator-metal transition characterized by site-selective delocalization of the electrons. M\"ossbauer spectroscopy, X-ray diffraction and electrical…

The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic configuration of these perovskites differs by one electron associated to the transition…

强关联电子 · 物理学 2023-09-04 A. D. N. James , M. Aichhorn , J. Laverock

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others…

强关联电子 · 物理学 2016-01-12 Yilin Wang , Li Huang , Liang Du , Xi Dai

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…

材料科学 · 物理学 2020-04-29 P. Ganesh , Frank Lechermann , Ilkka Kylanpaa , Jaron Krogel , Paul R. C. Kent , Olle Heinonen

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V$_2$O$_3$ -- a material which undergoes the f amous Mott-Hubbard metal-insulator transition…

强关联电子 · 物理学 2009-11-10 K. Held , J. W. Allen , V. I. Anisimov , V. Eyert , G. Keller , H. -D. Kim , S. -K. Mo , D. Vollhardt

Pb doping effect in the Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$ compound (Bi2223) on the structural and electronic properties were investigated, using the Local Density (LDA) and Virtual Crystal (VCA) approximations within the framework of the…

强关联电子 · 物理学 2016-03-23 J. A. Camargo-Martínez , R. Baquero

The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has…

Mn ions' doping site and valence were studied in PbTiO$_{3}$ (PT) with the native vacancy defects by the first-principles calculations. Firstly, the native vacancy defects of Pb, O and Ti in PT were investigated and it was found that Pb…

材料科学 · 物理学 2021-06-28 H. Xin , Q. Pang , D. L. Gao , L. Li , P. Zhang , J. Zhao

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

Y-doped BaZrO$_3$ is a promising proton conductor for intermediate temperature solid oxide fuel cells. In this work, a combination of static DFT calculations and DFT based molecular dynamics (DFT-MD) was used to study proton conduction in…

Sm-doped BiFeO3 compacted powders with composition across the morphotropic phase boundary region were prepared by sol-gel method. Crystal structure, morphology and magnetic state of the compounds were analyzed as a function of dopant…

We propose the concept of "hybridization-switching induced Mott transition" which is relevant to a broad class of ABO$_3$ perovskite materials including BiNiO$_3$ and PbCrO$_3$ which feature extended $6s$ orbitals on the A-site cation (Bi…

强关联电子 · 物理学 2019-01-21 Atanu Paul , Anamitra Mukherjee , Indra Dasgupta , Arun Paramekanti , Tanusri Saha-Dasgupta

The archetypal $3d$ Mott insulator hematite, Fe$_2$O$_3$, is one of the basic oxide components playing an important role in mineralogy of Earth's lower mantle. Its high pressure-temperature behavior, such as the electronic properties,…

强关联电子 · 物理学 2019-10-07 I. Leonov , G. Kh. Rozenberg , I. A. Abrikosov

We have conducted a detailed high-pressure (HP) investigation on $Eu-$doped $BaTiO_3$ using angle-resolved x-ray diffraction, Raman spectroscopy, dielectric permittivity and dc resistance measurements. The x-ray diffraction data analysis…

材料科学 · 物理学 2023-04-04 Mrinmay Sahu , Bishnupada Ghosh , Bobby Joseph , Goutam Dev Mukherjee

Oxygen doping in metallic YBa_2Cu_3O_x induces quadrupolar "alpha-ortho'', and breathing "beta-ortho" deformations of the CuO_2 planes. Breathing beta-ortho deformations favour hybridizations of the pd sigma Cu3d_x^2-y^2 - O2p_x,y with the…

超导电性 · 物理学 2015-06-24 J. Röhler

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann

The cuprate material BSCCO-2212 is believed to be doped by a combination of cation switching and excess oxygen. The interstitial oxygen dopants are of particular interest because scanning tunnelling microscopy (STM) experiments have shown…

超导电性 · 物理学 2009-11-11 Y. He , T. S. Nunner , P. J. Hirschfeld , H. -P. Cheng

Several elements show valence skip fluctuation, for instance, Tl forms the compounds in valence states +1 and +3, and Bi forms in +3 and +5 states. This kind of fluctuation gives rise to a negative effective attractive interaction and the…

强关联电子 · 物理学 2009-11-13 Izumi Hase , Takashi Yanagisawa

We perform a comprehensive theoretical study of the pressure-induced evolution of the electronic structure, magnetic state, and phase stability of the late transition metal monoxides MnO, FeO, CoO, and NiO using a fully charge…

强关联电子 · 物理学 2020-06-22 I. Leonov , A. O. Shorikov , V. I. Anisimov , I. A. Abrikosov
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