相关论文: Performance Prediction of InP/GaAsSb Double Hetero…

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

We analyze the qualitative features in the transition spectra of a model superconductor with multiple energy gaps, using a simple extension of the Mattis-Bardeen expression for probes with case I and case II coherence factors. At…

A polycrystalline sample of the MgB_2 superconductor was investigated by measurements of the electrical resistivity, the thermopower and the thermal conductivity in the temperature range between 1.8K and 300K in zero magnetic field. The…

Recently, Fang et al. have predicted a high ZT of 1.54 in TaSbRu alloys at 1200 K from first-principles without considering spin-orbit interaction, accurate electronic structure, details of phonon scattering, and energy-dependent holes…

We study the performance of an hot-electron bolometer (HEB) operating at THz frequencies based on superconducting niobium nitride films. We report on the voltage response of the detector over a large optical bandwidth carried out with…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

We studied the effect of the NbN/Au contact on the sensitivities of a NbN hot electron bolometer (HEB) mixer by measuring the double sideband (DSB) receiver noise temperature (T_rec_DSB) at three local oscillator frequencies of 1.6, 2.5 and…

We report first-principles density-functional study of electron-phonon interactions and thermoelectric transport properties of full-Heusler compounds Sr$_{2}$BiAu and Sr$_{2}$SbAu. Our results show that ultrahigh intrinsic bulk…

We theoretically investigate the time- and frequency-domain two-particle correlations of a driven dissipative Bose-Hubbard model (BHM) at and near a dissipative phase transition (DPT). We compute Hanbury Brown-Twiss (HBT) type two-particle…

We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by…

Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely…

The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most…

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We…

Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…

To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate…

A two-temperature magnetohydrodynamic (MHD) model, which evolves the electron and ion temperatures separately, is implemented in the PSI-Tet code and used to model plasma dynamics in the HIT-SI experiment. When compared with…

We report on time-resolved linear and nonlinear terahertz spectroscopy of the two-band superconductor MgB$_2$ with the superconducting transition temperature $T_c \approx 36$ K. Third-harmonic generation (THG) is observed below $T_c$ by…

The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands…