相关论文: Hafnia-based Double Layer Ferroelectric Tunnel Jun…

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution…

We present the first experimental demonstration of a neuromorphic network with magnetic tunnel junction (MTJ) synapses, which performs image recognition via vector-matrix multiplication. We also simulate a large MTJ network performing MNIST…

We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.

Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here,…

The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage…

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…

Hexagonal boron nitride ($h$-BN), with its strong in-plane bonding and good lattice match to hcp and fcc metals, offers a promising alternative barrier material for magnetic tunnel junctions (MTJs). Here, we investigate spin-dependent…

Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The…

Hafnia-based ferroelectrics are revolutionizing the data storage industry and the field of ferroelectrics, with improved materials and devices being reported monthly. However, full understanding and control has not been reached yet and the…

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…

We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high $I_cR_n$-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional…

Inspired by ion-dominated synaptic plasticity in human brain, artificial synapses for neuromorphic computing adopt charge-related quantities as their weights. Despite the existing charge derived synaptic emulations, schemes of controlling…

Thermoelectric effects in metals are typically small due to the nearly-perfect particle-hole (PH) symmetry around their Fermi surface [1, 2]. Despite being initially considered paradoxical [3], thermophase effects [4-8] and linear…

We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The…

HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and…

We clarify the nature of hafnia as a proper ferroelectric and show that there is a shallow double well involving a single soft polar mode as in well-known classic ferroelectrics. Using symmetry analysis, density-functional theory (DFT)…

We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the…

Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…

Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…