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Van der Waals heterostuctures, made from stacks of two-dimensional materials, exhibit unique light-matter interactions and are promising for novel optoelectronic devices. The performance of such devices is governed by near-field coupling…

介观与纳米尺度物理 · 物理学 2018-01-23 Guillaume Froehlicher , Etienne Lorchat , Stéphane Berciaud

Ultrathin CrSBr flakes are exfoliated \emph{in situ} on Au(111) and Ag(111) and their electronic structure is studied by angle-resolved photoemission spectroscopy. The thin flakes' electronic properties are drastically different from those…

Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…

材料科学 · 物理学 2021-09-07 K M Abeywickrama , P K D D P Pitigala , W W P De Silva

The chapter generalizes results on influence of uniaxial strain and adsorption on the electron states and charge transport or localization in graphene with different configurations of imperfections (point defects): resonant (neutral)…

The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene,…

We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial…

We present a method where a bioactive functional layer on an electrically conductive thin film with high sheet resistance can be effectively used for complementary electrochemical impedance spectroscopy biosensing. The functional layer's…

材料科学 · 物理学 2025-04-04 Munis Khan , Ivan Mijakovic , Santosh Pandit , August Yurgens

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2…

材料科学 · 物理学 2015-05-13 F. V. Di Girolamo , C. Aruta , M. Barra , P. D Angelo , A. Cassinese

A two-dimensional layer of oxide reveals itself as a essential element to drive the photocatalytic activity in a nanostructured hybrid material, which combines high-quality epitaxial graphene and titanium dioxide nanoparticles. In…

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While…

We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide…

介观与纳米尺度物理 · 物理学 2018-06-13 Alexandr I. Cocemasov , Calina I. Isacova , Denis L. Nika

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons…

The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article,…

介观与纳米尺度物理 · 物理学 2018-05-29 Hasan M. Abdullah , H. Bahlouli

Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and…

材料科学 · 物理学 2012-09-04 Ji Eun Lee , Gwanghyun Ahn , Jihye Shim , Young Sik Lee , Sunmin Ryu

We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account…

材料科学 · 物理学 2022-05-24 S. E. Krasavin , V. A. Osipov

The stress transfer mechanism from a polymer substrate to a nano-inclusion, such as a graphene flake, is of extreme interest for the production of effective nanocomposites. Previous work conducted mainly at the micron scale has shown that…

The effect of external static charging on borophenes - 2D boron crystals - is investigated by using first principles calculations. The influence of the excess negative charge on the stability of the 2D structures is examined using a very…

材料科学 · 物理学 2021-09-21 T. Tarkowski , J. A. Majewski , N. Gonzalez Szwacki

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…

介观与纳米尺度物理 · 物理学 2015-05-30 X. Li , K. M. Borysenko , M. Buongiorno Nardelli , K. W. Kim

Due to low dimensionality, the controlled stacking of the graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the…

介观与纳米尺度物理 · 物理学 2020-11-10 Zahra Khatibi , Afshin Namiranian , Fariborz Parhizgar

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese…

材料科学 · 物理学 2009-11-13 U. Stöberl , U. Wurstbauer , W. Wegscheider , D. Weiss , J. Eroms