相关论文: Negative correlation between the linear and the no…

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…

The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (Cl) across the series combination of geometric…

We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability…

Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…

The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of the its Josephson current. Here we address the…

The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated.…

The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The…

The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe…

The coherent tunneling spin current in the bilayer system with spin-orbit coupling is investigated. Based on the continuity-like equations, we discuss the definition of the tunneling current and show that the overlaps between wavefunctions…

Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is…

We calculate the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy $E_c$ between two electrons with opposite…

The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…

A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…

We study magnon-driven spin and heat transport in a magnetic linear junction (MLJ) formed by two ferromagnets in optical lattices linked via linearly aligned bonds. Using the Schwinger-Keldysh formalism, we uncover that under weak effective…

In this work, we calculate with ab initio methods the current-voltage characteristics for ideal single- and double-barrier Fe/MgO (001) magnetic tunnel junctions. The current is calculated in the phase-coherent limit by using the recently…

Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck…

The linear conductance of a tunnel junction in series with an ohmic resistor is determined in the high temperature limit. The tunneling current is treated nonperturbatively by means of path integral techniques. Due to quantum effects the…

CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…

We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its…