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The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large…

Auger-like exciton-exciton annihilation (EEA) is considered the key fundamental limitation to quantum yield in devices based on excitons in two-dimensional (2d) materials. Since it is challenging to experimentally disentangle EEA from…

介观与纳米尺度物理 · 物理学 2021-10-12 Alexander Steinhoff , Matthias Florian , Frank Jahnke

Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton…

介观与纳米尺度物理 · 物理学 2023-04-13 Luca Sortino , Merve Gülmüs , Benjamin Tilmann , Leonardo de S. Menezes , Stefan A. Maier

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the…

光学 · 物理学 2016-06-01 Yiling Yu , Yifei Yu , Chao Xu , Andy Barrette , Kenan Gundogdu , Linyou Cao

Exciton-exciton annihilation (EEA), in which two excitons interact to generate high-energy excitations, is an important non-radiative channel in light-induced excited-state relaxation. When efficient, this process offers an alternative…

材料科学 · 物理学 2025-06-06 Guy Vosco , Sivan Refaely-Abramson

Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an…

Exciton-exciton annihilation (EEA) and Auger recombination are detrimental processes occurring in semiconductor optoelectronic devices at high carrier densities. Despite constituting one of the main obstacles for realizing lasing in…

介观与纳米尺度物理 · 物理学 2020-10-29 Moritz Gramlich , Bernhard J. Bohn , Yu Tong , Lakshminarayana Polavarapu , Jochen Feldmann , Alexander S. Urban

We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs.…

介观与纳米尺度物理 · 物理学 2016-09-12 Mark Danovich , Viktor Zólyomi , Igor L. Aleiner , Vladimir I. Fal'ko

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative…

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton…

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the…

介观与纳米尺度物理 · 物理学 2019-07-24 Alexandre Plaud , Léonard Schué , Kenji Watanabe , Takashi Taniguchi , Annick Loiseau , Julien Barjon

Atomically thin two-dimensional crystals have revolutionized materials science. In particular, monolayer transition metal dichalcogenides promise novel optoelectronic applications, due to their direct energy gaps in the optical range. Their…

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a…

材料科学 · 物理学 2021-08-25 Hyungjin Kim , Shiekh Zia Uddin , Naoki Higashitarumizu , Eran Rabani , Ali Javey

The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…

Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy…

Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body effects like exciton-exciton annihilation (EEA) have been widely explored in this…

介观与纳米尺度物理 · 物理学 2022-04-05 Suman Chatterjee , Garima Gupta , Sarthak Das , Kenji Watanabe , Takashi Taniguchi , Kausik Majumdar

Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a…

介观与纳米尺度物理 · 物理学 2014-10-16 Ziliang Ye , Ting Cao , Kevin O'Brien , Hanyu Zhu , Xiaobo Yin , Yuan Wang , Steven G. Louie , Xiang Zhang

Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations…

The remarkably strong Coulomb interaction in atomically thin transition metal dichalcogenides (TMDs) results in an extraordinarily rich many-particle physics including the formation of tightly bound excitons. Besides optically accessible…

介观与纳米尺度物理 · 物理学 2017-03-10 Malte Selig , Gunnar Berghäuser , Marten Richter , Rudolf Bratschitsch , Andreas Knorr , Ermin Malic

The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and…

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