相关论文: Aluminum Nitride Two-Dimensional-Resonant-Rods
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
This article presents an approach to control the operating frequency and fractional bandwidth (FBW) of miniature acoustic filters in thin-film lithium niobate (TFLN). More specifically, we used first-order antisymmetric (A1) mode…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
Lithium niobate (LN) is a promising material for building acoustic resonators used in quantum applications, but its performance is limited by poorly understood material defects called two-level systems (TLS). In this work, we fabricate…
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over…
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified…
High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform…
Compact, high-performance components in millimeter-wave (mmWave) communication systems demand new acoustic filter technology at increasingly higher frequencies. Among various promising mmWave platforms, first-order antisymmetric (A1) mode…
We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission.…
This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride…
This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for…
This paper reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) utilizing 30% Scandium-doped Aluminum Nitride on Silicon Carbide, operating near 16 GHz. Experimental results show mechanical quality factors up to 380,…
High-performance piezoelectric resonators are promising energy storage elements for piezoelectric power conversion due to their compact footprint and low loss at frequencies where conventional magnetic components become bulky and…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
Superconducting resonators with high-kinetic inductance play a central role in hybrid quantum circuits, enabling strong coupling with quantum systems with small electric dipole moment and improved parametric amplification. However,…
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…
Atomic layer deposition (ALD), a layer-by-layer controlled method to synthesize ultrathin materials, provides various merits over other techniques such as precise thickness control, large area scalability and excellent conformality. Here we…
Nanomechanical resonators with high quality factors (\Qm{}) enable mechanics-based quantum technologies, in particular quantum sensing and quantum transduction. High-\Qm{} nanomechanical resonators in the kHz to MHz frequency range can be…
This letter presents miniature millimeter wave (mmWave, above 30 GHz) acoustic resonators based on a single-layer thin-film lithium niobate (LN) platform. More specifically, we present high performance third-order antisymmetric (A3) mode…