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相关论文: {\gamma}-GeSe:a new hexagonal polymorph from group…

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In this paper we report the structure of the Li4Ge4 cluster as a function of charge transfer and polarizability. We find that for small charge transfer (Q < 0.5) this cluster has the expected cubic structure: a Ge4 tetrahedron with a Li ion…

材料科学 · 物理学 2007-05-23 W. Geertsma

Structural studies on the icosahedral quasicrystals in Zn-Mg-Sc, Cu-Ga-Mg-Sc, and Zn-Mg-Ti alloys as well as their corresponding 1/1 cubic approximants, have revealed that these quasicrystals belong to a new structural group similar to…

材料科学 · 物理学 2009-11-10 Tsutomu Ishimasa , Yasushi Kaneko , Hiroshi Kaneko

In the upcoming process to overcome the limitations of the standard von Neumann architecture, synaptic electronics is gaining a primary role for the development of in-memory computing. In this field, Ge-based compounds have been proposed as…

Short range order and topology of Ge$_x$S$_{100-x}$ glasses over a broad composition range (20 $\le$ x $\le$ 42 in at%) was investigated by neutron diffraction, X-ray diffraction, and Ge K-edge extended X-ray absorption fine structure…

Group-V monolayer materials exhibit intriguing electronic and optical properties, influenced by their unique crystal symmetries and structural phases. In this work, we study arsenic monolayers, investigating their electronic and optical…

材料科学 · 物理学 2026-04-28 Niloufar Dadkhah , Walter R. L. Lambrecht

Two-dimensional (2D) materials tend to have the preferably formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D…

材料科学 · 物理学 2023-08-29 Changmeng Huan , Yongqing Cai , Devesh R. Kripalani , Kun Zhou , Qingqing Ke

A silicene-like polymorph of the Si111 7x7 surface is proposed that resolves numerous experimental paradoxes and inconsistencies arising over the past 34 years. An analysis of the three established surface state charge densities from atom…

材料科学 · 物理学 2019-05-30 J. E. Demuth

We apply an Ising-type model to estimate the band gaps of the polytypes of group IV elements (C, Si, and Ge) and binary compounds of groups: IV-IV (SiC, GeC, and GeSi), and III-V (nitride, phosphide, and arsenide of B, Al, and Ga). The…

化学物理 · 物理学 2023-10-03 Raghunathan Ramakrishnan , Shruti Jain

Electron-counting rules were applied to understand the stability, structural preference, and physical properties of metal disilicides. Following predictions made by 14 electron counting rules, the ordered semiconductor ReGaSi, the first…

材料科学 · 物理学 2017-10-04 Weiwei Xie , Lea Gustin , Guang Bian

Low-dimensional media have exhibited optical anisotropy that is unachievable in traditional 3D media due to the asymmetry of their strong, in-plane covalent bonds and weak out-of-plane van der Waals interactions. As a result, 2D media are…

A superstructure can elicit versatile new properties of materials by breaking their original geometrical symmetries. It is an important topic in the layered graphene-like two-dimensional transition-metal dichalcogenides (TMDs), but its…

New classes two-dimensional (2D) materials beyond graphene, including layered and non-layered, and their heterostructures, are currently attracting increasing interest due to their promising applications in nanoelectronics, optoelectronics…

The valence band maxima of most group-VI transition metal dichalcogenide thin films remain at the $\Gamma$-point all the way from bulk to bilayer. In this paper we develop a continuum theory of the moir\`e minibands that are formed in the…

强关联电子 · 物理学 2021-04-28 M. Angeli , A. H. MacDonald

Carbon is the most important chemical element and the theoretical study of its new allotropes can be of great interest. In this study, regular dodecahedron (dodecahedrane) oligomers (n = 1, 3, 5, 7, 9, 11, 13) by extending the dodecahedrane…

计算物理 · 物理学 2023-11-14 Siavash Hasanvandi , Elham Neisi , José M. De Sousa

Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables the unprecedented possibilities for combining the best of different ingredients in one…

Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale…

We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous…

介观与纳米尺度物理 · 物理学 2021-03-12 Salvador Barraza-Lopez , Benjamin M. Fregoso , John W. Villanova , Stuart S. P. Parkin , Kai Chang

A new type of compositionally complex (medium- or high-entropy) M5Si3 silicides is synthesized. Both (V1/5Cr1/5Nb1/5Ta1/5W1/5)5Si3 and (Ti1/5Zr1/5Nb1/5Mo1/5Hf1/5)5Si3 form single-phase homogenous solid solutions. Notably,…

材料科学 · 物理学 2021-12-16 Sashank Shivakumar , Mingde Qin , Dawei Zhang , Chongze Hu , Qizhang Yan , Jian Luo

Two boron-rich chalcogenides B12S and B12Se isostructural to {\alpha}-rhombohedral boron were synthesized by chemical reaction of the elements at high-pressure - high-temperature conditions. The crystal structures and stoichiometries of…

Understanding of recently reported putative close-to-room-temperature superconductivity in C-S-H compounds at 267 GPa demands reproducible synthesis protocol as well as knowledge of its structure and composition. We synthesized C-S-H…