相关论文: 4.2 K Sensitivity-Tunable Radio Frequency Reflecto…
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary…
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large…
Quantum computing has emerged as a promising technology for next-generation information processing, utilizing semiconductor quantum dots as one of the candidates for quantum bits. Radio-frequency (rf) reflectometry plays an important role…
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide…
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices…
We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the…
Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances.…
A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are…
We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device.…
Low phase noise MEMS oscillators necessitate resonators with high f-Q. Resonators achieving high f-Q (mechanical frequency-quality factor product) close to the thermo-elastic damping (TED) limit have been demonstrated at expense of…
We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were made using RF best practices following similar detection…
We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the…
We report the realization of a bonded-bridge on-chip superconducting coil and its use in impedance-matching a highly ohmic quantum dot (QD) to a $\rm{3~GHz}$ measurement setup. The coil, modeled as a lumped-element $LC$ resonator, is more…
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the…
We introduce an algorithm that is able to find the facets of Coulomb diamonds in quantum dot arrays. We simulate these arrays using the constant-interaction model, and rely only on one-dimensional raster scans (rays) to learn a model of the…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Radio-frequency reflectometry allows for fast and sensitive electrical readout of charge and spin qubits hosted in quantum dot devices coupled to resonant circuits. Optimizing readout, however, requires frequency tuning of the resonators…
Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for…