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相关论文: Uncovering Phase Change Memory Energy Limits by Su…

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Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

硬件体系结构 · 计算机科学 2013-09-17 Sparsh Mittal

This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM peration schemes (constant electric field, voltage, and…

介观与纳米尺度物理 · 物理学 2013-02-11 Jie Liu , Bin Yu , M. P. Anantram

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

硬件体系结构 · 计算机科学 2020-12-01 Shihao Song , Anup Das

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

硬件体系结构 · 计算机科学 2025-12-02 Mahek Desai , Rowena Quinn , Marjan Asadinia

We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…

介观与纳米尺度物理 · 物理学 2013-05-23 Kyle L. Grosse , Feng Xiong , Sungduk Hong , William P. King , Eric Pop

Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

强关联电子 · 物理学 2015-01-15 H. Oike , F. Kagawa , N. Ogawa , A. Ueda , H. Mori , M. Kawasaki , Y. Tokura

We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and…

介观与纳米尺度物理 · 物理学 2009-11-13 Ozhan Ozatay , Barry Stipe , Jordan Katine , Bruce Terris

Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…

信息论 · 计算机科学 2012-07-20 Minghai Qin , Eitan Yaakobi , Paul H. Siegel

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

硬件体系结构 · 计算机科学 2025-11-10 Mahek Desai , Rowena Quinn , Marjan Asadinia

Neuromorphic or neurally-inspired optimizers rely on local but parallel parameter updates to solve problems that range from quadratic programming to Ising machines. An ideal realization of such an optimizer not only uses a compute-in-memory…

机器学习 · 计算机科学 2026-03-31 Zihao Chen , Faiek Ahsan , Johannes Leugering , Gert Cauwenberghs , Shantanu Chakrabartty

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…

In-memory computing (IMC) is an emerging non-von Neumann paradigm that leverages the intrinsic physics of memory devices to perform computations directly within the memory array. Among the various candidates, phase-change memory (PCM) has…

介观与纳米尺度物理 · 物理学 2025-09-29 Davide G. F. Lombardo , Siddharth Gautam , Alberto Ferraris , Manuel Le Gallo , Abu Sebastian , Ghazi Sarwat Syed

The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With…

应用物理 · 物理学 2024-01-19 Benedikt Kersting

Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…

新兴技术 · 计算机科学 2019-04-02 Raihan Sayeed Khan , Nadim H. Kanan , Jake Scoggin , Helena Silva , Ali Gokirmak

Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…

神经与进化计算 · 计算机科学 2020-07-07 Shihao Song , Anup Das

Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…

介观与纳米尺度物理 · 物理学 2026-01-14 Valeriy A. Slipko , Alon Ascoli , Fernando Corinto , Yuriy V. Pershin

For decades, conventional computers based on the von Neumann architecture have performed computation by repeatedly transferring data between their processing and their memory units, which are physically separated. As computation becomes…

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