中文
相关论文

相关论文: Highly Efficient Bilateral Doping of Single-Walled…

200 篇论文

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

材料科学 · 物理学 2009-11-10 Ali Javey , Pengfei Qi , Qian Wang , Hongjie Dai

We used scattering-type scanning near-field optical microscopy (s-SNOM) to characterize nickel nanoclusters grown inside single-walled carbon nanotubes (SWCNT). The nanotubes were filled with Ni(II) acetylacetonate and the molecules were…

The effect of doping MgB2 with carbon nanotubes on transition temperature, lattice parameters, critical current density and flux pinning was studied for MgB2-xCx with x = 0, 0.05, 0.1, 0.2 and 0.3. The carbon substitution for B was found to…

超导电性 · 物理学 2007-05-23 S. X. Dou , W. K. Yeoh , J. Horvat , M. Ionescu

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of…

介观与纳米尺度物理 · 物理学 2015-06-11 Narae Kang , Biddut K. Sarker , Saiful I. Khondaker

High-purity cubic silicon carbide possesses the second-highest thermal conductivity among large-scale crystals, surpassed only by diamond, making it crucial for practical applications of thermal management. Recent theoretical studies…

材料科学 · 物理学 2024-09-30 Zifeng Huang , Yunfan Yang , Da Sheng , Hui Li , Yuxiang Wang , Zixuan Sun , Ming Li , Runsheng Wang , Ru Huang , Zhe Cheng

We apply a recently-developed low-field technique to inductively measure the critical pair momentum $p_c$ in thin, underdoped films of Y$_{1-x}$Ca$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ and Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ reflecting a…

超导电性 · 物理学 2015-06-22 John Draskovic , Stanley Steers , Thomas McJunkin , Adam Ahmed , Thomas R. Lemberger

The search for earth abundant, efficient and stable electrocatalysts that can enable the chemical reduction of CO2 to value-added chemicals and fuels at an industrially relevant scale, is a high priority for the development of a global…

Recent investigations of superconductivity in carbon nanotubes have shown that a single-wall zigzag nanotube can become superconducting at around 15 K. Theoretical studies of superconductivity in nanotubes using the traditional phonon…

超导电性 · 物理学 2007-05-23 S. M. Bose , S. Gayen

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon…

介观与纳米尺度物理 · 物理学 2015-06-03 Muhammad R. Islam , Kristy J. Kormondy , Eliot Silbar , Saiful I. Khondaker

The fabrication of electrochemical double-layer capacitors (EDLCs) with high areal capacitance relies on the use of elevated mass loadings of highly porous active materials. Herein, we demonstrate a high-throughput manufacturing of…

Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…

We present a systematic experimental investigation of the reactions between hydrogen plasma and single-walled carbon nanotubes (SWNTs) at various temperatures. Microscopy, infrared (IR) and Raman spectroscopy and electrical transport…

材料科学 · 物理学 2007-05-23 Guangyu Zhang , Pengfei Qi , Xinran Wang , Yuerui Lu , David Mann , Xiaolin Li , Hongjie Dai

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…

Carbon nanotubes (CNTs) have attracted increasing attention because of their unique structural, mechanical, and electronic properties. Surface chemistry modifications are also useful and critical to manipulate the adsorptive properties of…

材料科学 · 物理学 2007-08-15 K. -S. Lin , Ruey-Bing Li , Frank Lee , Li-Cheng Lou , Su-Wei Chiu

Applications based on Single Walled Carbon Nanotube (SWNT) are good example of the great need to continuously develop metrology methods in the field of nanotechnology. Contact and interface properties are key parameters that determine the…

介观与纳米尺度物理 · 物理学 2012-01-23 Julien Buchoux , Ludovic Bellon , Sophie Marsaudon , Jean-Pierre Aimé

Properties of transition metal (TM) doped single wall (8,0) SiC nanotube is investigated using first principles density functional theory as implemented within quantum espresso code. The properties studied are electronic, optical, and…

材料科学 · 物理学 2022-05-20 A. T. Mulatu , K. N. Nigussa , L. D. Deja

High bias electrical transport characteristics of freely suspended metallic single-walled carbon nanotubes (SWNTs) are investigated at 250-400K in vacuum and various gases. Self-heating is exploited to examine the temperature dependence of…

介观与纳米尺度物理 · 物理学 2007-05-23 David Mann , Eric Pop , Jien Cao , Qian Wang , Kenneth Goodson , Hongjie Dai

We report on single-wall carbon nanotube (SWCNT) specific $^{13}$C isotope enrichment. The high temperature annealing of isotope enriched fullerenes encapsulated in SWCNTs yields double-wall carbon nanotubes (DWCNTs) with a high isotope…

材料科学 · 物理学 2007-05-23 F. Simon , Ch. Kramberger , R. Pfeiffer , H. Kuzmany , V. Zolyomi , J. Kurti , P. M. Singer , H. Alloul

We report a high-pressure study on the heavily electron doped Lix(NH3)yFe2Se2 single crystal by using the cubic anvil cell apparatus. The superconducting transition temperature Tc = 44 K at ambient pressure is first suppressed to below 20 K…

超导电性 · 物理学 2018-01-31 P. Shahi , J. P. Sun , S. S. Sun , Y. Y. Jiao , K. Y. Chen , S. H. Wang , H. C. Lei , Y. Uwatoko , B. S. Wang , J. -G. Cheng

Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of…

材料科学 · 物理学 2009-11-07 Paul E. Lammert , Vincent H. Crespi , Angel Rubio