相关论文: Mott Memristors based on Field-Induced Carrier Ava…
A new mean field theory is proposed for the Mott transition in the Hubbard model based on the slave rotor representation of the electron operator. This theory provides a better description of the role of the long range charge correlation in…
Using strong-coupling time-dependent perturbation theory, we study the response of Mott and charge-transfer insulators to an oscillating electric field. We derive analytical expressions for the resulting higher-harmonic currents and show…
Altermagnets are a novel class of materials that combine antiferromagnetic spin ordering with non-relativistic spin splitting (NRSS) in their band structure, making them promising candidates for spintronics applications without requiring…
We report on the investigation of the three-dimensional single-atom-resolved distributions of bosonic Mott insulators in momentum-space. Firstly, we measure the two-body and three-body correlations deep in the Mott regime, finding a…
Two-dimensional moir\'e materials have emerged as the most versatile platforms for realizing quantum phases of electrons. Here, we explore the stability origins of correlated states in WSe2/WS2 moir\'e superlattices. We find that ultrafast…
We present an analytical and experimental study of torsional magnetic mechanism where the restoring torque is due to magnetic field interactions between rotating and fixed permanent magnets. The oscillator consists of a ball…
Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators…
The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by…
Narrow-band conductors may turn insulating and magnetic as a consequence of strong electron-electron correlation. In molecular conductors, the concomitance of a strong Jahn-Teller coupling may give rise to the alternative possibility of a…
Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…
We develop a method for extracting the steady nonequilibrium current from studies of driven isolated systems, applying it to the model of one-dimensional Mott insulator at high temperatures. While in the nonintegrable model the…
We propose theoretically a generalized memristive system based on controlled spin polarizations in the giant magnetoresistive material using a feedback loop with the classical Hall Effect. The dynamics can exhibit a memristive pinched…
Mott insulators based on $4d$ and $5d$ transition-metal ions, where spin-orbit interaction plays a key role, can exhibit various forms of unusual magnetism. A particular example is the antiferromagnet Ca$_2$RuO$_4$ containing $d^4$…
We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap…
The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin…
We consider a series of Mott insulators in unit of two orbitals each hosting spin-1/2 electron, and by pairing two spin-1/2 into spin-1 triplet, derive the effective exchange interaction between the adjacent units via fourth order…
We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes…
Ground state properties of multi-orbital Hubbard models are investigated by the auxiliary field quantum Monte Carlo method. A Monte Carlo technique generalized to the multi-orbital systems is introduced and examined in detail. The algorithm…