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Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon…

凝聚态物理 · 物理学 2009-10-31 Chris G. van de Walle , Catherine Stampfl , Joerg Neugebauer

We report the observation of a change in Fermi surface topology of Bi2Sr2CaCu2O8 with doping. By collecting high statistics ARPES data from moderately and highly overdoped samples and dividing the data by the Fermi function, we answer a…

We study the normal-state, doping-driven phase diagram of the square-lattice Hubbard model using the dynamical cluster approximation combined with the numerical renormalization group as a cluster solver, which gives direct access to…

强关联电子 · 物理学 2026-05-15 Mathias Pelz , Gabriel Kotliar , Jan von Delft , Andreas Gleis

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

介观与纳米尺度物理 · 物理学 2012-07-31 Sugata Mukherjee , T. P. Kaloni

First-principles calculations are employed to explore avenues to increase the N\'eel temperature ($T_{\mathrm{N}}$) of the magnetoelectric antiferromagnet Cr$_2$O$_3$ through doping. Employing the hybrid functional method, we calculate the…

材料科学 · 物理学 2025-06-13 Xuecong Wang , Sai Mu

We theoretically study, through combining the density functional theory and an unfolding technique, the electronic band structure and the charge doping effects for the deposition of potassium (K) on multilayer FeSe films grown on SrTiO3…

介观与纳米尺度物理 · 物理学 2016-02-24 Fawei Zheng , Li-Li Wang , Qi-Kun Xue , Ping Zhang

This work investigates how site-specific doping can enhance the thermoelectric performance of tetragonal Cu$_{2}$S using Density functional Theory and Projected Atomic Orbital Framework for Electronic Transport. We address the gap in…

材料科学 · 物理学 2025-01-29 Sonam Phuntsho

Heteroatom doping is an important method for engineering graphene nanoribbons (GNRs) because of its ability to modify electronic properties by introducing extra electrons or vacancies. However, precisely integrating oxygen atoms into the…

We present all electron computations of the 3D Fermi surfaces (FS's) in Ba$_{1-x}$K$_{x}$BiO$_{3}$ for a number of different compositions based on the selfconsistent Korringa-Kohn-Rostoker coherent-potential-approximation (KKR-CPA) approach…

材料科学 · 物理学 2009-10-31 S. Sahrakorpi , B. Barbiellini , R. S. Markiewicz , S. Kaprzyk , M. Lindroos , A. Bansil

Motivated by a recent theoretical suggestion that doping electrons into various CaAl$_2$Si$_2$-type Zintl phase compounds may give rise to high thermoelectric performance, we explore the possibility of n-type (electron carrier) doping of…

材料科学 · 物理学 2022-06-01 Kazutaka Nishiguchi , Masayuki Ochi , Chul-Ho Lee , Kazuhiko Kuroki

We performed angle-resolved photoemission spectroscopy with micro-focused beam on a topological line-nodal compound CaSb2 which undergoes a superconducting transition at the onset Tc~1.8 K, to clarify the Fermi-surface topology relevant to…

The upper critical field ($H_{c2}$) in superconducting BaFe$_{2-x}$Ni$_{x}$As$_2$ single crystals has been determined by magnetotransport measurements down to 0.6 K over the whole superconducting dome with $0.065 \leqslant x \leqslant…

We characterize the electron doping evolution of (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ by means of angle-resolved photoemission. Concomitant with the metal insulator transition around $x\approx0.05$ we find the emergence of coherent…

MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only…

材料科学 · 物理学 2020-06-30 Mao-Hua Du , Jiaqiang Yan , Valentino R. Cooper , Markus Eisenbach

Whether a quantum critical point (QCP) demarcates the end of the pseudogap (PG) regime in hole-doped cuprates at a singular doping level $p^* \approx 0.19$ remains an open question. A crucial part of this puzzle is how the carrier density…

We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…

材料科学 · 物理学 2023-09-08 Divya Sherin G T , R. N Bhowmik

Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or…

介观与纳米尺度物理 · 物理学 2014-02-25 A. Tavkhelidze

The amorphous conducting carbon films have been prepared at three different preparation temperatures with different boron-doping levels. The structural and transport properties of the same have been studied. X-ray diffraction measurements…

无序系统与神经网络 · 物理学 2007-05-23 P. N. Vishwakarma , S. V. Subramanyam

The phase diagram of electron-doped pnictides is studied varying the temperature, electronic density, and isotropic quenched disorder strength by means of computational techniques applied to a three-orbital ($xz$, $yz$, $xy$) spin-fermion…

超导电性 · 物理学 2015-10-28 Shuhua Liang , Christopher B. Bishop , Adriana Moreo , Elbio Dagotto

The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement.…