相关论文: Charge-noise spectroscopy of Si/SiGe quantum dots …

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…

Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with…

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…

Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth…

In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge…

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots…

Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this…

We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are…

Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a…

Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small…

Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…

Semiconductor qubits are appealing for building quantum processors as they may be densely integrated due to small footprint. However, a high density raises the issue of noise correlated across different qubits, which is of practical concern…

The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional…

We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the…

Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities…

Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…

Charge noise remains the primary obstacle to the development of quantum information technologies with semiconductor spin qubits. We use an exact analytical calculation to determine the effects of quasistatic charge noise on a ring of three…

Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the…