相关论文: Non-adiabatic single-electron pump in a dopant-fre…

Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of…

Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A…

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…

The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising…

Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in…

The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non…

We study non-adiabatic two-parameter charge and spin pumping through a single-level quantum dot with Coulomb interaction. For the limit of weak tunnel coupling and in the regime of pumping frequencies up to the tunneling rates, $\Omega…

We utilize a time-periodic ratchet-like potential modulation imposed onto a two-dimensional electron system inside a GaAs/Al$_x$Ga$_{1-x}$As heterostructure to evoke a net dc pumping current. The modulation is induced by two sets of…

We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…

We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally…

We consider adiabatic charge transport through an almost open quantum dot. We show that the charge transmitted in one cycle is quantized in the limit of vanishing temperature and one-electron mean level spacing in the dot. The explicit…

In this Letter, we study the real-ime dynamics of single-electron pumpings. We modulate the left tunneling barrier along with the dot level but slightly changing the right barrier to operate the single-electron pumping device at zero bias.…

We use the equations of motion of non-interacting electrons in a one-dimensional system to numerically study different aspects of charge pumping. We study the effects of the pumping frequency, amplitude, band filling and finite bias on the…

We use exact techniques to demonstrate theoretically the pumping of fractional charges in a single-level non-interacting quantum dot, when the dot-reservoir coupling is adiabatically driven from weak to strong coupling. The pumped charge…

We present a thermometry scheme to extract the temperature of a 2DEG by monitoring the charge occupation of a weakly tunnel-coupled 'thermometer' quantum dot using a quantum point contact detector. Electronic temperatures between 97 mK and…

We put forward nonadiabatic charge pumping as a method for accessing the different charge relaxation rates as well as the relaxation rates of excited orbital states in double-quantum-dot setups, based on extremely size-limited quantum dots…

We study the dynamics of electron and energy currents in a nonadiabatic pump. The pump is a quantum dot nanojunction with time-varying gate potential and tunnel couplings to the leads. The leads are unbiased and maintained at the same…

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

Adiabatic topological pumping enables robust transport of energy and information, yet its operational speed is fundamentally constrained by the instantaneous adiabatic condition, which necessitates prohibitively slow parameter variations.…