相关论文: Non-adiabatic single-electron pump in a dopant-fre…

We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves (SAWs) through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures…

We set up a general density-operator approach to geometric steady-state pumping through slowly driven open quantum systems. This approach applies to strongly interacting systems that are weakly coupled to multiple reservoirs at high…

Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and…

Non-adiabatic charge pumping through a single-level quantum dot with periodically modulated parameters is studied theoretically. By means of a quantum-master-equation approach the full counting statistics of the system is obtained. We find…

We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding $40\times 10^6$ cm$^2$ / (Vs). Several devices were fabricated, with the highest achieved…

Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable…

Adiabatic pumping is characterized by a geometric contribution to the pumped charge, which can be non-zero even in the absence of a bias. However, as the driving speed is increased, non-adiabatic excitations gradually reduce the pumped…

Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-$Ga_2O_3$ could strongly influence and contribute to the development of the next generation of…

Using a tight-binding model, we study one-parameter charge pumping in a one-dimensional system of non-interacting electrons. An oscillating potential is applied at one site while a static potential is applied in a different region. Using…

We propose a new type of quantum pump made out of graphene, adiabatically driven by oscillating voltages applied to two back gates. From a practical point of view, graphene-based quantum pumps present advantages as compared to normal pumps,…

Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…

We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade…

We consider the adiabatic pumping of charge through a mesoscopic one dimensional wire in the presence of electron-electron interactions. A two-delta potential model is used to describe the wire, which allows to obtain exactly the scattering…

We study charge pumping when a combination of static potentials and potentials oscillating with a time period T is applied in a one-dimensional system of non-interacting electrons. We consider both an infinite system using the Dirac…

We demonstrate the robust operation of a gallium arsenide tunable-barrier single-electron pump operating with 1 part-per-million accuracy at a temperature of $1.3$~K and a pumping frequency of $500$~MHz. The accuracy of current quantisation…

We consider adiabatic pumping of electrons through a quantum dot. There are two ways to operate the pump: to create a dc current ${\bar I}$ or to create a dc voltage ${\bar V}$. We demonstrate that, for very slow pumping, ${\bar I}$ and…

A quantum pumping mechanism which produces dc current or voltage in response to a cyclic deformation of the confining potential in an open quantum dot is reported. The voltage produced at zero current bias is sinusoidal in the phase…

Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be…

We theoretically study nonadiabatic corrections for charge pumping in a noninteracting electron model of a single-level quantum dot. We derive a formula for the velocity limit of parameter driving to realize adiabatic pumping and illustrate…

Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop…